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首页> 外文期刊>Journal of Micromechanics and Microengineering >The fabrication of patternable silicon nanotips using deep reactive ion etching
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The fabrication of patternable silicon nanotips using deep reactive ion etching

机译:使用深度反应离子刻蚀制造可图案化的硅纳米尖端

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摘要

This paper presents a novel fabrication method of patternable silicon nanotips. The proposed fabrication method involves four steps: lithography, the first deep reactive ion etching (DRIE), removal of the photoresist and the second DRIE. The fabricated silicon nanotips are well aligned along the edges of microstructures. The plane shape of the microstructure was determined by the patterned shape of the photoresist. It means that the silicon nanotips can be patterned by the patterned shape of the photoresist. The width of the nanotips, 1 μm below the top, was measured to be about 200 nm. The fabricated nanotips were applied to modify the surface of silicon from hydrophilic to superhydrophobic. The contact angle was drastically increased from 79.7° (bare silicon surface) to 158.3° (surface modified with nanotips). Therefore, the surface was modified from hydrophilic to superhydrophobic.
机译:本文提出了一种可图案化的硅纳米尖端的新型制造方法。所提出的制造方法包括四个步骤:光刻,第一深反应离子刻蚀(DRIE),去除光致抗蚀剂和第二DRIE。所制造的硅纳米尖端沿着微结构的边缘很好地对齐。微观结构的平面形状由光致抗蚀剂的图案化形状确定。这意味着可以通过光刻胶的图案化形状来对硅纳米尖端进行图案化。纳米尖端的宽度,在顶部以下1μm,经测量约为200 nm。所制造的纳米尖端被应用于将硅的表面从亲水性改变为超疏水性。接触角从79.7°(裸硅表面)急剧增加到158.3°(用纳米尖端改性的表面)。因此,表面从亲水性改性为超疏水性。

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