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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Effect of heavy ion implantation on self-assembled single layer InAs/GaAs quantum dots
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Effect of heavy ion implantation on self-assembled single layer InAs/GaAs quantum dots

机译：重离子注入对自组装单层InAs / GaAs量子点的影响

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摘要

We report the degradation in photoluminescence efficiency of GaAs/(InAs/GaAs) quantum dot (QD) heterostructures subjected to 20 to 50 keV sulfur implantation. Sulfur ions of fluence ranging from 2.5 × 10 ~(13) to 2 × 10~(15) ions cm~(-2) were used for implantation. Implantation resulted in shift in photoluminescence emission towards lower wavelength and degradation in photoluminescence efficiency. X-ray diffraction analysis revealed reduction in crystalline quality of GaAs cap layer and an amorphous layer was accomplished with 50 keV sulfur implantation, with a fluence of 2.5 × 10~(14) ions cm~(-2). The amorphous layer was formed due to the overlap of defect clusters created during implantation, as a result of exceeding the critical nuclear energy density deposited in the GaAs system. Cross-sectional transmission electron microscopy revealed damage zones in the cap layer and deformation of QDs upon 50 keV sulfur implantation. Creation of damaged/amorphous GaAs layer probably increased the compressive strain in InAs/GaAs QDs, which resulted in change in energy gap of QDs and blue shift in photoluminescence emission. Implantation resulted in decrease in activation energy from 111 meV (20 keV) to 10 meV (50 keV S). Increase in implantation energy created defects/damage profile at a depth in the vicinity of the QDs. Non-radiative recombination of carriers through these defects might be the possible reason for the degradation of photoluminescence efficiency.
机译：我们报告了进行20至50 keV硫注入的GaAs /（InAs / GaAs）量子点（QD）异质结构的光致发光效率下降。注入的硫离子浓度范围为2.5×10〜（13）至2×10〜（15）cm〜（-2）。植入导致光致发光发射移向较低波长，并降低了光致发光效率。 X射线衍射分析表明，GaAs盖层的结晶质量下降，通过50 keV硫注入，通量为2.5×10〜（14）离子cm〜（-2），完成了非晶层的形成。由于超过了GaAs系统中沉积的临界核能密度，非晶层的形成是由于在注入过程中产生的缺陷簇的重叠。横截面透射电子显微镜揭示了在盖层中的损坏区域和50 keV硫注入后量子点的变形。损伤/非晶态砷化镓层的产生可能会增加InAs / GaAs量子点中的压缩应变，从而导致量子点的能隙变化和光致发光发射的蓝移。植入导致活化能从111 meV（20 keV）降至10 meV（50 keV S）。注入能量的增加在量子点附近的深度处产生了缺陷/损伤轮廓。通过这些缺陷的载流子的非辐射重组可能是光致发光效率降低的可能原因。

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