...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Extrinsic doping of CuGaSe2 single crystals
【24h】

Extrinsic doping of CuGaSe2 single crystals

机译：CuGaSe2单晶的本征掺杂

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Technological applications of semiconductors depend critically on the ability to dope them. Single crystals of CuGaSe2 were doped during crystal growth either by a post-growth diffusion step or by ion-implantation, in order to study the limits of extrinsic doping. The electrical and optical properties of the doped samples are analysed by Hall effect and photoluminescence (PL) measurements. The carrier concentration at room temperature can be adjusted between 2 x 10(19) cm(-3) (p-type) and 10(17) cm(-3) (n-type). Various donor and acceptor levels are identified and ascribed to dopant-induced point defects taking into account the dopant concentration and/or the post-growth treatment of the single crystals. [References: 53]
机译：半导体的技术应用主要取决于掺杂它们的能力。为了研究非本征掺杂的限制，通过生长后扩散步骤或离子注入对CuGaSe2单晶进行了掺杂。通过霍尔效应和光致发光（PL）测量来分析掺杂样品的电学和光学性质。室温下的载流子浓度可以在2 x 10（19）cm（-3）（p型）和10（17）cm（-3）（n型）之间调整。考虑到单晶的掺杂剂浓度和/或生长后处理，确定各种施主和受主水平并将其归因于掺杂剂引起的点缺陷。 [参考：53]

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号