Long-range order in CdZnTe epilayers

Amir N.; Stolyarova S.; Chack A.; Beserman R.; Nemirovsky Y.; Cohen K.

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Long-range order in CdZnTe epilayers

机译：CdZnTe外延层中的远距离有序

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We report the evidence of long-range order (LRO) in CdZnTe epilayers grown by metal organic chemical vapour deposition (MOCVD) on (100) CdTe. LRO has been characterized by both transmission electron microscopy (TEM) and polarized photoluminescence (PL) measurements. The observation of extra-spots in the diffraction pattern of Cd0.52Zn0.48Te samples indicate the CuPt type structure, as corroborated by computer simulation. Valence band splitting (VBS) up to 25 meV, measured by polarized PL gives additional proof of atomic ordering. The order parameter eta = 0.6 was calculated from VBS using a parabolic approximation. [References: 19]

机译：我们报告了在（100）CdTe上通过金属有机化学气相沉积（MOCVD）生长的CdZnTe外延层中的远距离有序（LRO）的证据。 LRO已通过透射电子显微镜（TEM）和偏振光致发光（PL）测量进行了表征。 Cd0.52Zn0.48Te样品衍射图样中观察到的额外斑点表明，CuPt型结构已得到计算机模拟的证实。通过极化PL测量的高达25 meV的价带分裂（VBS）提供了原子序的额外证据。使用抛物线近似从VBS计算阶数参数eta = 0.6。 [参考：19]

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《Journal of Physics, D. Applied Physics: A Europhysics Journal》 |2000年第2期|共9页
作者
Amir N.; Stolyarova S.; Chack A.; Beserman R.; Nemirovsky Y.; Cohen K.;
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正文语种 eng
中图分类应用物理学;
关键词
Phase-separation; Alloys; Crystals; Zn; Cd; Te;

机译：相分离;合金;晶体;Zn;Cd;Te;

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1. Long-range order in CdZnTe epilayers [J] . Amir N., Stolyarova S., Chack A., Journal of Physics, D. Applied Physics: A Europhysics Journal . 2000,第2期

机译：CdZnTe外延层中的远距离有序
2. Improvement of crystalline quality of CdZnTe epilayers on GaAs(001) substrates with a two-step growth by Close Spaced Sublimation [J] . Cao Kun, Jie Wanqi, Zha Gangqiang, Vacuum: Technology Applications & Ion Physics: The International Journal & Abstracting Service for Vacuum Science & Technology . 2019,第期

机译：通过闭合间隔升华，改善GaAs（001）衬底上的Cdznte癫痫术的结晶质量，其两步生长
3. CdZnTe Substrate Surface Preparation Technology at ASELSAN, Inc. for Molecular Beam Epitaxy Growth of High Quality HgCdTe Epilayers [J] . Asici B., Eroglu H. C., Ergunt Y., Journal of Electronic Materials . 2018,第10期

机译：Aselsan，Inc。的Cdznte衬底表面制备技术用于高质量HGCDTE脱落剂的分子束外延生长
4. Dislocation cell structures in CdZnTe substrates and its behavior of threading into HgCdTe LPE epilayers [C] . CUI Xiaopan, FANG Weizheng, WEI Yanfeng, ISPDI 2011;International symposium on photoelectronic detection and imaging . 2012

机译：CdZnTe衬底中的位错细胞结构及其穿入HgCdTe LPE外延层的行为
5. Fabrication and characterization of compact high resolution radiation detectors based on 4h-sic n-type epilayer and cdznte. [D] . Zavalla Mendoza, Kelvin J. 2013

机译：基于4h-sic n型外延层和cdznte的紧凑型高分辨率辐射探测器的制造与表征。
6. Size-confined fixed-composition and composition-dependent engineered band gap alloying induces different internal structures in L-cysteine-capped alloyed quaternary CdZnTeS quantum dots [O] . Oluwasesan Adegoke, Enoch Y. Park -1

机译：尺寸受限的固定成分和依赖成分的工程带隙合金化在L-半胱氨酸封端的四元CdZnTeS量子点中诱导了不同的内部结构
7. Spectral Dependence of the Photoplastic Effect in CdZnTe and CdZnTeSe [O] . Jan Franc, Václav Dědič, Pavel Moravec, 2021

机译：CDZNTE和CDZNTESE中光塑性效果的光谱依赖性

Long-range order in CdZnTe epilayers

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