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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Power density in RF PECVD: a factor for deposition of amorphous silicon thin films and successive solid phase crystallization
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Power density in RF PECVD: a factor for deposition of amorphous silicon thin films and successive solid phase crystallization

机译：RF PECVD中的功率密度：非晶硅薄膜沉积和连续固相结晶的一个因素

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摘要

Solid phase crystallization of amorphous silicon thin films deposited by radio frequency plasma enhanced chemical vapour deposition (RF PECVD) has been studied. The effects of power density variation on the properties of amorphous and microcrystalline films (after crystallization) have been discussed. A fast growth rate of the amorphous layer (12.5 Angstrom s(-1)) and large grain (similar to350 Angstrom) microcrystalline film has been reported. A high value of electrical dark conductivity (similar to10(-6) S cm(-1)) is also obtained for the microcrystalline (intrinsic) film. It has been observed that deposition rate and bonded hydrogen content in the amorphous films play important roles in the crystallization process and properties of the crystallized films. Electron resonance spectra indicate an increase in defect density of amorphous films with increase in power density and better crystallization is obtained for films with higher density of defects. Scanning electron microscopy reveals that the nature of film surfaces and distribution of grain in the crystallized films are strongly affected by the power density regime in the deposition process. [References: 30]
机译：研究了通过射频等离子体增强化学气相沉积（RF PECVD）沉积的非晶硅薄膜的固相结晶。讨论了功率密度变化对非晶和微晶膜（结晶后）性能的影响。据报道，非晶层（12.5埃·s（-1））和大晶粒（类似于350埃）的微晶膜的生长速度很快。对于微晶（本征）膜，还可以获得较高的暗导电性值（类似于10（-6）S cm（-1））。已经观察到，非晶膜中的沉积速率和键合氢含量在结晶过程和结晶膜的性质中起重要作用。电子共振谱表明，随着功率密度的增加，非晶膜的缺陷密度增加，对于缺陷密度较高的膜，其结晶性更好。扫描电子显微镜显示，沉积过程中的功率密度机制对薄膜表面的性质和结晶薄膜中晶粒的分布有很大影响。 [参考：30]

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