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首页> 外文期刊>Journal of Physics, D. Applied Physics: A Europhysics Journal >Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells
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Light emission ranging from blue to red from a series of InGaN/GaN single quantum wells

机译：一系列InGaN / GaN单量子阱的发光范围从蓝色到红色

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摘要

In this paper, we describe the growth and characterization of InGaN single quantum wells with emission peaks in the blue, green. amber and red spectral regions, grown by metal-organic vapour phase epitaxy. Starting from the growth of a blue-emitting (peak similar to430 nm) InGaN quantum well at 860degreesC the InGaN growth temperature was progressively reduced. The photoluminescence peak wavelength, measured at low temperature, shifts through the green and orange spectral regions and reaches 670 nm for an InGaN growth temperature of 760degreesC. This corresponds to an energy lower than the currently accepted band-gap of the binary compound, InN. Spectral characteristics of the luminescence peaks will be discussed. including all analysis of the phonon-assisted contribution. Low energy secondary ion mass spectrometry analysis provides information on the indium content and thickness of the 'blue' and 'red' quantum wells. The results are combined to discuss the origin of the 'sub-band-gap' luminescence in terms of the combined influence of InN-GaN segregation and the effect of intense piezoelectric fields. [References: 19]
机译：在本文中，我们描述了具有蓝色，绿色发射峰的InGaN单量子阱的生长和特性。通过金属有机气相外延生长的琥珀色和红色光谱区域。从在860℃下发射蓝光（峰值类似于430 nm）的InGaN量子阱开始生长，逐渐降低了InGaN的生长温度。在760摄氏度的InGaN生长温度下，在低温下测得的光致发光峰值波长会穿过绿色和橙色光谱区域，并达到670 nm。这对应于比二元化合物InN的当前接受的带隙低的能量。将讨论发光峰的光谱特性。包括对声子辅助贡献的所有分析。低能二次离子质谱分析提供了有关“蓝色”和“红色”量子阱的铟含量和厚度的信息。结合InN-GaN偏析和强压电场效应的综合结果，讨论了“子带隙”发光的起源。 [参考：19]

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