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Gravity effect on the properties of In_xGa_(1-x)Sb ternary alloys grown at the International Space Station - In_xGa_(1-x)Sb growth at the International Space Station

机译:重力对在国际空间站生长的In_xGa_(1-x)Sb三元合金性能的影响-在国际空间站生长的In_xGa_(1-x)Sb三元合金

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摘要

In_xGa_(1-x)Sb crystals were grown at the International Space Station (ISS) under microgravity (μG), and terrestrial conditions (1G) to understand the growth process of alloy semiconductors. The shape of the growth interface was nearly flat under μG, whereas under 1G, it was highly concave. The growth rate was higher under μG compared with 1G. The quality of the crystal was better under μG, as low etch pit density was observed compared with that of 1G condition. The suppressed convection under μG affected the dissolution and growth process of alloy semiconductor.
机译:In_xGa_(1-x)Sb晶体在国际空间站(ISS)的微重力(μG)和地面条件(1G)下生长,以了解合金半导体的生长过程。在μG以下,生长界面的形状几乎是平坦的,而在1G以下,则是高度凹入的。在μG下,增长率高于1G。在μG下,晶体质量更好,因为与1G条件相比,观察到的蚀刻坑密度较低。 μG下对流的抑制影响了合金半导体的溶解和生长过程。

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