...
  • 主题
高级搜索  >
历史搜索 清空历史
首页> 外文期刊>電子情報通信学会技術研究報告. レ-ザ·量子エレクトロニクス. Lasers and Quantum Electronics >Growth and optical properties of GaAsN alloys grown by RF-MBE
【24h】

Growth and optical properties of GaAsN alloys grown by RF-MBE

机译：RF-MBE生长的GaAsN合金的生长和光学性能

获取原文
获取原文并翻译 | 示例
           
页面导航
  • 摘要
  • 著录项
  • 相似文献
  • 相关主题

摘要

Due to the optimization of the growth conditions of GaAsN alloys for higher N contents, GaAsN alloys with N contents up to 4.5 % were successfully grown by RF-MBE. The band gap energies were investigated by photoreflectance spectroscopy. In the low (<1%) content region, the bowing parameter is estimated as 22 eV by fitting to a quadratic curve. However the deviation of the experimental data from the fitting curve becomes large as N content increases. With the N content of 4.5%, the band gap energy of GaAsN is observed as low as 1.33 μm (0.93 eV).
机译：由于对高N含量的GaAsN合金的生长条件进行了优化，通过RF-MBE成功地生长了N含量高达4.5％的GaAsN合金。带隙能量通过光反射光谱法研究。在低含量（<1％）区域，通过拟合二次曲线可将弯曲参数估计为22 eV。然而，随着N含量的增加，实验数据与拟合曲线的偏差变大。当N含量为4.5％时，观察到GaAsN的带隙能低至1.33μm（0.93 eV）。

著录项

相似文献

  • 外文文献
  • 中文文献
  • 专利
获取原文

客服邮箱：kefu@zhangqiaokeyan.com

京公网安备：11010802029741号 ICP备案号：京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有

  • 客服微信

  • 服务号