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首页> 外文期刊>ACS applied materials & interfaces >Low-Temperature Facile Synthesis of Sb-Doped p-Type ZnO Nanodisks and Its Application in Homojunction Light-Emitting Diode
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Low-Temperature Facile Synthesis of Sb-Doped p-Type ZnO Nanodisks and Its Application in Homojunction Light-Emitting Diode

机译：Sb掺杂p型ZnO纳米盘的低温简便合成及其在同质结发光二极管中的应用

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摘要

This study explores low-temperature solution process-based seed-layer-free ZnO p-n homojunction light emitting diode (LED). In order to obtain p-type ZnO nanodisks (NDs), antimony (Sb) was doped into ZnO by using a facile chemical route at 120 degrees C. The X-ray photoelectron spectra indicated the presence of (Sb-Zn-2V(Zn).) acceptor complex in the Sb-doped ZnO NDs. Using these NDs as freestanding templates, undoped n-type ZnO nanorods (NRs) were epitaxially grown at 95 degrees C to form ZnO p-n homojunction. The homojunction with a turn-on voltage of 2.5 V was found to be significantly stable up to 100 s under a constant voltage stress of 5 V. A strong orange-red emission was observed by the naked eye under a forward bias of 5 V. The electroluminescence spectra revealed three major peaks at 400, 612, and 742 nm which were attributed to the transitions from Zn-i to VBM, from Zn-1 to O-i, and from V-O to VBM, respectively. The presence of these deep-level defects was confirmed by the photoluminescence of ZnO NRs. This study paves the way for future applications of ZnO homojunction LEDs using low-temperature and low-cost solution processes with the controlled use of native defects.
机译：这项研究探索了基于低温溶液工艺的无籽晶层的ZnO p-n同质结发光二极管（LED）。为了获得p型ZnO纳米盘（NDs），通过在120摄氏度下使用便捷的化学路线将锑（Sb）掺杂到ZnO中.X射线光电子能谱表明存在（Sb-Zn-2V（Zn ）。）掺Sb的ZnO ND中的受体配合物。使用这些ND作为独立模板，未掺杂的n型ZnO纳米棒（NRs）在95摄氏度外延生长以形成ZnO p-n同质结。发现在5 V的恒定电压应力下，开启电压为2.5 V的同质结在100 s内可以保持稳定。在5 V的正向偏压下，肉眼观察到强烈的橙红色发射。电致发光光谱显示在400、612和742 nm处的三个主要峰，分别归因于从Zn-i到VBM，从Zn-1到Oi以及从VO到VBM的跃迁。 ZnO NRs的光致发光证实了这些深层缺陷的存在。这项研究为使用低温和低成本解决方案工艺以及可控地使用本机缺陷的ZnO同质结LED的未来应用铺平了道路。

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