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Gradual tilting exposure photo and nano lithography technique

机译:逐渐倾斜曝光照片和纳米光刻技术

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摘要

We report a novel tilting exposure photolithography (TEL) technique where gradual pattern displacement is employed to achieve high-resolution features over large areas with reasonable exposure times. A linear array with features of the order of 100 nm has been realized using this technique with standard blue-light LED sources. TEL can be useful in the visible and ultraviolet spectra to create two-dimensional periodic structures. The created structures include the nanometric array of spots and lines. The proposed technique can be used as a writing method where complex features can be generated by moving the sample-holding leading to serpentine nanometric linear arrays.
机译:我们报告了一种新颖的倾斜曝光光刻(TEL)技术,该技术采用渐变图案位移以合理的曝光时间在大面积上实现高分辨率功能。使用这种技术和标准的蓝光LED源,已经实现了具有100 nm数量级特征的线性阵列。 TEL在可见光谱和紫外线光谱中很有用,可以创建二维周期性结构。创建的结构包括点和线的纳米阵列。所提出的技术可以用作一种书写方法,其中可以通过移动导致弯曲成蛇形纳米线性阵列的样品保持来生成复杂的特征。

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