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首页> 外文期刊>Nanotechnology >Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates
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Growth of dilute nitride GaAsN/GaAs heterostructure nanowires on Si substrates

机译：稀氮化硅GaAsN / GaAs异质结构纳米线在Si衬底上的生长

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摘要

The concept of band engineering dilute nitride semiconductors into nanowires is introduced. Using plasma-assisted molecular beam epitaxy, dilute nitride GaAsN/GaAs heterostructure nanowires are grown on silicon (111) substrates. Growth of the nanowires under high As overpressure results in a regular wire diameter of 350 nm with a length exceeding 3 μm. The GaAsN/GaAs nanowires show characteristics including favorable vertical alignment, hexagonal cross-sectional structure with {110} facets, regions of wurtzite and zinc-blende phases, and a core-shell-type heterostructure. The nanowires are composed of GaAsN shells containing up to 0.3% nitrogen surrounding GaAs cores. Panchromatic cathodoluminescence images show intensity modulation along the length of the nanowires that is possibly related to the interfaces of wurtzite/zinc-blende regions. Photoluminescence with peak wavelengths between 870 and 920 nm is clearly observed at room temperature. The spectral red shift depends on the amount of introduced nitrogen. These results reveal a method for precise lattice and band engineering of nanowires composed of dilute nitride semiconductors.
机译：介绍了将能带工程技术将氮化物半导体稀释成纳米线的概念。使用等离子体辅助分子束外延，在硅（111）衬底上生长稀氮化物GaAsN / GaAs异质结构纳米线。纳米线在高砷超压下的生长导致线规直径为350 nm，长度超过3μm。 GaAsN / GaAs纳米线的特性包括良好的垂直排列，具有{110}面的六边形横截面结构，纤锌矿相和闪锌矿相区域以及核-壳型异质结构。纳米线由GaAsN壳组成，其中GaAs核周围的氮含量高达0.3％。全色阴极发光图像显示了沿着纳米线长度的强度调制，这可能与纤锌矿/闪锌矿区域的界面有关。在室温下清楚地观察到峰值波长在870和920 nm之间的光致发光。光谱红移取决于引入的氮量。这些结果揭示了一种用于由稀氮化物半导体构成的纳米线的精确晶格和能带工程的方法。

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