Polaron-induced lattice distortion of (In, Ga) As/GaAs quantum dots by optically excited carriers

Tiemeyer S.; Bombeck M.; Goehring H.; Paulus M.; Sternemann C.; Nase J.; Wirkert F. J.; Moeller J.; Buening T.; Seeck O. H.; Reuter D.; Wieck A. D.; Bayer M.; Tolan M.

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Polaron-induced lattice distortion of (In, Ga) As/GaAs quantum dots by optically excited carriers

机译：光学激发载流子对（In，Ga）As / GaAs量子点的极化子诱导的晶格畸变

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We report on a high resolution x-ray diffraction study unveiling the effect of carriers optically injected into (In, Ga) As quantum dots on the surrounding GaAs crystal matrix. We find a tetragonal lattice expansion with enhanced elongation along the [001] crystal axis that is superimposed on an isotropic lattice extension. The isotropic contribution arises from excitation induced lattice heating as confirmed by temperature dependent reference studies. The tetragonal expansion on the femtometer scale is tentatively attributed to polaron formation by carriers trapped in the quantum dots.

机译：我们报道了一项高分辨率的X射线衍射研究，揭示了将光学注入到（In，Ga）As量子点中的载流子对周围GaAs晶体基质的影响。我们发现四方晶格扩展具有沿[001]晶轴延伸的增强伸长，该四方晶格扩展叠加在各向同性晶格扩展上。各向同性的贡献是由激发引起的晶格加热引起的，如温度依赖性参考研究所证实。在飞米刻度上的四方膨胀暂时归因于陷在量子点中的载流子形成极化子。

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《Nanotechnology》 |2016年第42期|共7页
作者
Tiemeyer S.; Bombeck M.; Goehring H.; Paulus M.; Sternemann C.; Nase J.; Wirkert F. J.; Moeller J.; Buening T.; Seeck O. H.; Reuter D.; Wieck A. D.; Bayer M.; Tolan M.;
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正文语种 eng
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quantum dots; polarons; semiconductor;

机译：量子点;极化子;半导体;

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1. Polaron-induced lattice distortion of (In, Ga) As/GaAs quantum dots by optically excited carriers [J] . Tiemeyer S., Bombeck M., Goehring H., Nanotechnology . 2016,第42期

机译：光学激发载流子对（In，Ga）As / GaAs量子点的极化子诱导的晶格畸变
2. Carrier density dependences of anisotropic optical properties in closely stacked InAs/GaAs one-dimensional quantum dot superlattices [J] . Teruhisa Kotani, Paolo Lugli, Chihiro Hamaguchi Applied Physics Letters . 2013,第3期

机译：紧密堆积的InAs / GaAs一维量子点超晶格中各向异性光学性质的载流子密度依赖性
3. Structural and optical properties of In0.5Ga0.5As/GaAs quantum dots in an In0.1Ga0.9As well using repeated depositions of InAs/GaAs short-period superlattices for the application of optical communication [J] . Song JD, Choi WJ, Lee JI, Physica, E. Low-dimensional systems & nanostructures . 2006,第1a2期

机译：In0.1Ga0.9As井中In0.5Ga0.5As / GaAs量子点的结构和光学性质，使用InAs / GaAs短周期超晶格的重复沉积进行光通信应用
4. Optical Characteristics of InAs Quantum Dots Influenced by AlGaAs/GaAs Superlattice Barriers [C] . Nanotechnology conference and trade show . 2003

机译：INAS量子点的光学特性受ALGAAS / GAAS超廓障碍的影响
5. Carrier dynamics in IndiumGalliumArsenic/GalliumArsenic quantum dots excited by femtosecond laser pulses. [D] . Chauhan, Kripa Nidhan. 2013

机译：飞秒激光脉冲激发的铟镓砷/镓砷量子点中的载流子动力学。
6. Theoretical study of strain-dependent optical absorption in a doped self-assembled InAs/InGaAs/GaAs/AlGaAs quantum dot [O] . Tarek A Ameen, Hesameddin Ilatikhameneh, Archana Tankasala, 2018

机译：掺杂的自组装InAs / InGaAs / GaAs / AlGaAs量子点中应变相关的光吸收的理论研究
7. Polaron-induced lattice distortion of (In,Ga)As quantum dots by optically excited carriers [O] . Tiemeyer, Sebastian, Bombeck, Michael, Paulus, Michael, 2014

机译：极化子诱导晶格畸变（In，Ga）as量子点光学激发的载体

Polaron-induced lattice distortion of (In, Ga) As/GaAs quantum dots by optically excited carriers

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