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首页> 外文期刊>Nanotechnology >Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods
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Cathodoluminescence study of Mg activation in non-polar and semi-polar faces of undoped/Mg-doped GaN core-shell nanorods

机译：阴极发光研究未掺杂/掺镁GaN核壳纳米棒在非极性和半极性面上的镁活化

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摘要

Spectrally and spatially resolved cathodoluminescence (CL) measurements were carried out at 80 K on undoped/Mg-doped GaN core-shell nanorods grown by selective area growth metalorganic vapor phase epitaxy in order to investigate locally the optical activity of the Mg dopants. A study of the luminescence emission distribution over the different regions of the nanorods is presented. We have investigated the CL fingerprints of the Mg incorporation into the non-polar lateral prismatic facets and the semi-polar facets of the pyramidal tips. The amount of Mg incorporation/activation was varied by using several Mg/Ga flow ratios and post-growth annealing treatment. For lower Mg/Ga flow ratios, the annealed nanorods clearly display a donor-acceptor pair band emission peaking at 3.26-3.27 eV and up to 4 LO phonon replicas, which can be considered as a reliable indicator of effective p-type Mg doping in the nanorod shell. For higher Mg/Ga flow ratios, a substantial enhancement of the yellow luminescence emission as well as several emission subbands are observed, which suggests an increase of disorder and the presence of defects as a consequence of the excess Mg doping.
机译：光谱和空间分辨阴极荧光（CL）测量是在80 K上对通过选择性区域生长金属有机气相外延生长的未掺杂/掺杂Mg的GaN核-壳纳米棒进行的，以便局部研究Mg掺杂剂的光学活性。提出了在纳米棒的不同区域上的发光发射分布的研究。我们已经研究了镁的CL指纹结合到锥体尖端的非极性侧面棱柱面和半极性方面。通过使用几种Mg / Ga流量比和生长后退火处理，可以改变Mg的掺入/活化量。对于较低的Mg / Ga流量比，退火后的纳米棒清楚地显示出在3.26-3.27 eV处达到峰的施主-受主对带发射峰和多达4个LO声子副本，这可以被视为有效掺杂p型Mg的可靠指标纳米棒壳。对于较高的Mg / Ga流量比，可以观察到黄色发光发射以及几个发射子带的显着增强，这表明由于过量的Mg掺杂而增加了无序性和缺陷的存在。

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