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Electrical properties of GaAsN film grown by chemical beam epitaxy

机译：化学束外延生长GaAsN薄膜的电学性质

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The local vibrational modes (LVMs) observed by Fourier transform infrared (FTIR) spectroscopy in GaAsN films grown by chemical beam epitaxy (CBE) was studied, and the influence of the nitrogen-hydrogen bond (N-H) concentration on the hole concentration was investigated. The absorption peak around 936 cm(-1) is suggested to be the second harmonic mode of the substitutional N, N-As, LVM around 469cm(-1). The absorption peak around 960cm(-1) is suggested to be the wagging mode of the N-H, where the stretch mode is observed around 3098 cm(-1.) The hole concentration linearly increases with increasing N-H concentration, and the slope increases with increasing growth temperature. It indicates that the hole concentration in GaAsN film is determined by both the number of the N H and unknown defect, such as impurities, vacancies, and interstitials. This defect concentration increases with increasing growth temperature, suggesting that it is determined by Arrhenius type reaction. (c) 2007 Elsevier B.V. All rights reserved.
机译：研究了通过化学束外延（CBE）生长的GaAsN薄膜的傅立叶变换红外光谱（FTIR）观察到的局部振动模式（LVM），并研究了氮氢键（N-H）浓度对空穴浓度的影响。建议在936 cm（-1）附近的吸收峰是469cm（-1）附近N，N-As，LVM的二次谐波模式。建议在960cm（-1）附近的吸收峰是NH的摆动模式，在3098 cm（-1）附近观察到拉伸模式。空穴浓度随NH浓度的增加而线性增加，而斜率随NH的增加而增加。生长温度。这表明GaAsN膜中的空穴浓度是由N H的数目和未知缺陷（例如杂质，空位和间隙）共同决定的。该缺陷浓度随着生长温度的升高而增加，表明它是由阿累尼乌斯型反应确定的。 （c）2007 Elsevier B.V.保留所有权利。

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