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首页> 外文期刊>Physica, B. Condensed Matter >The effect of Al-doping on the structural, optical, electrical and cathodoluminescence properties of ZnO thin films prepared by spray pyrolysis
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The effect of Al-doping on the structural, optical, electrical and cathodoluminescence properties of ZnO thin films prepared by spray pyrolysis

机译：铝掺杂对喷雾热解法制备ZnO薄膜的结构，光学，电学和阴极发光性能的影响

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摘要

Aluminum doped zinc oxide (Al-doped ZnO) thin films were deposited by the spray pyrolysis technique onto the glass substrates at 450 1C using anhydrous zinc chloride (ZnCl_2) and aluminum chloride (AlCl_3) as sources of zinc and aluminum ions, respectively. The effect of [Al]/[Zn] ratio in the solution on the structural, optical, electrical and cathodoluminescence properties of these films were investigated. XRD study revealed that both undoped and Al-doped ZnO films were polycrystalline with hexagonal structure and exhibited (0 0 2) preferential orientation. The optical and electrical studies showed that the film deposited with the [Al]/[Zn] ratio equal to 0.05 had high transmittance (of about 80% and 95% in the visible and near infra-red regions, respectively) and minimum resistivity of 1.4×10~(-3)Ωcm, respectively. This resistivity value decreased with increase in temperature indicating the semiconducting nature of Al-doped ZnO films. The chemical composition analysis (EPMA) showed that this film was nearly stochiometric with a slight oxygen deficiency.
机译：使用无水氯化锌（ZnCl_2）和氯化铝（AlCl_3）分别作为锌和铝离子源，通过喷雾热解技术在450°C的条件下将掺铝的氧化锌（Al掺杂的ZnO）薄膜沉积到玻璃基板上。研究了溶液中[Al] / [Zn]比对这些薄膜的结构，光学，电学和阴极发光性质的影响。 XRD研究表明，未掺杂和掺杂Al的ZnO薄膜都是具有六方结构的多晶，并且具有（0 0 2）优先取向。光学和电学研究表明，以[Al] / [Zn]比等于0.05沉积的薄膜具有很高的透射率（在可见光和近红外区域分别约为80％和95％），电阻率最小。分别为1.4×10〜（-3）Ωcm。该电阻率值随温度的升高而降低，表明掺铝的ZnO薄膜具有半导体性质。化学成分分析（EPMA）表明，该膜几乎是化学计量的，略有缺氧。

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