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首页> 外文期刊>Physica, B. Condensed Matter >A new structure of nitride light-emitting diodes without polarization effects
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A new structure of nitride light-emitting diodes without polarization effects

机译：无偏振效应的氮化物发光二极管的新结构

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摘要

In conventional nitride light-emitting diodes (LEDs) manufactured on the standard polar substrates, polarization effects hamper in reaching efficient sources of green radiation. Those effects may be completely avoided in non-polar crystallographic orientations, but then there are problems with reaching relatively high indium contents necessary for the green emission. Hence a possibility of an application of the semi-polar orientations should be considered. As a promising example, we have decided to consider possible compositions of the In _xAl _yGa _(1-x-y)N barrier material adjusted with its polarization to the In _(0.3)Ga _(0.7)N quantum-well (QW) layer, expected to be the best suited for an emission of the green radiation. It is shown in the paper with the aid of the comprehensive mechanical and piezoelectric LED simulations, that, for the semi-polar (112?2) crystallographic orientation (inclination angle of 58°), an application of the In _(0.19)Al _(0.20)Ga _(0.61)N barriers for the In _(0.3)Ga _(0.7)N QWs leads to a complete elimination of unwanted polarization effects in the nitride LEDs emitting the green radiation.
机译：在标准极性基板上制造的常规氮化物发光二极管（LED）中，偏振效应妨碍了获得有效的绿色辐射源。在非极性晶体学取向上可以完全避免那些影响，但是然后存在达到绿色发射所需的相对较高的铟含量的问题。因此，应考虑应用半极性取向的可能性。作为一个有前途的例子，我们已决定考虑通过对In _（0.3）Ga _（0.7）N量子阱（QW）层的极化进行调整的In _xAl _yGa _（1-xy）N势垒材料的可能组成预计最适合发射绿色辐射。本文通过综合的机械和压电LED仿真显示，对于半极性（112？2）晶体学取向（倾斜角为58°），In _（0.19）Al的应用In _（0.3）Ga _（0.7）N QW的_（0.20）Ga _（0.61）N势垒可完全消除发出绿色辐射的氮化物LED中不需要的偏振效应。

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