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Effects of crossed electric and magnetic fields on the interband optical absorption spectra of variably spaced semiconductor superlattices

机译:交叉电场和磁场对可变间距半导体超晶格的带间光吸收谱的影响

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摘要

The interband optical absorption spectra of a GaAs-Ga1-xAlxAs variably spaced semiconductor super lattice under crossed in-plane magnetic and growth-direction applied electric fields are theoretically investigated. The electronic structure, transition strengths and interband absorption coefficients are analyzed within the weak and strong magnetic-field regimes. A dramatic quenching of the absorption coefficient is observed, in the weak magnetic-field regime, as the applied electric field is increased, in good agreement with previous experimental measurements performed in a similar system under growth-direction applied electric fields. A decrease of the resonant tunneling in the superlattice is also theoretically obtained in the strong magnetic-field regime. Moreover, in this case, we found an interband absorption coefficient weakly dependent on the applied electric field. Present theoretical results suggest that an in-plane magnetic field may be used to tune the optical properties of variably spaced semiconductor superlattices, with possible future applications in solar cells and magneto-optical devices. (C) 2016 Elsevier B.V. All rights reserved.
机译:理论上研究了在交叉的面内磁场和生长方向施加的电场下,GaAs-Ga1-xAlxAs可变间隔半导体超晶格的带间光吸收谱。在弱和强磁场范围内分析了电子结构,跃迁强度和带间吸收系数。在弱磁场条件下,随着所施加电场的增加,观察到吸收系数的急剧淬灭,这与先前在类似系统中在生长方向所施加电场下进行的实验测量非常吻合。从理论上讲,在强磁场条件下,超晶格中谐振隧穿的减少也得到了抑制。此外,在这种情况下,我们发现带间吸收系数与所施加的电场弱相关。当前的理论结果表明,面内磁场可用于调节可变间隔的半导体超晶格的光学特性,并可能在太阳能电池和磁光器件中得到未来的应用。 (C)2016 Elsevier B.V.保留所有权利。

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