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Nonlinear optical interband transitions between electronic states in semiconductors in crossed-electric and magnetic fields

机译:交叉电场和磁场中半导体电子状态之间的非线性光学带间跃迁

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Abstract: Since within the effective mass approximation the Hamiltonian describing the electronic states of a semiconductor in the presence of crossed electric and magnetic fields contains non local potentials, then the interaction Hamiltonian between matter and radiation field has to be generalized in order to preserve the gauge independence of physical quantities. The two photon interband transition rate between two particular levels is evaluated in both length and velocity gauges demonstrating the correctness of our approach, moreover, the difference with the traditional approach is discussed. !17
机译:摘要:由于在有效质量近似中,描述存在交叉电场和磁场的情况下半导体的电子状态的哈密顿量包含非局部电势,因此必须推广物质与辐射场之间的相互作用哈密顿量以保持量规物理量的独立性。在长度计和速度计中对两个特定水平之间的两个光子带间跃迁速率进行了评估,证明了我们方法的正确性,此外,还讨论了与传统方法的区别。 !17

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