Nonlinear optical interband transitions between electronic states in semiconductors in crossed-electric and magnetic fields

机译：交叉电场中半导体中电子状态的非线性光学间隙转换

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Since within the effective mass approximation the Hamiltonian describing the electronic states of a semiconductor in the presence of crossed electric and magnetic fields contains non local potentials, then the interaction Hamiltonian between matter and radiation field has to be generalized in order to preserve the gauge independence of physical quantities. The two photon interband transition rate between two particular levels is evaluated in both length and velocity gauges demonstrating the correctness of our approach, moreover, the difference with the traditional approach is discussed.

机译：由于在有效的质量近似内，所描述在交叉电场和磁场的存在中的半导体的电子状态的Hamiltonian包含非局部电位，因此物质和辐射场之间的相互作用哈密顿人员必须是推广的，以便保持尺寸的独立性物理量。在两个特定级别之间的两个光子间间转换速率在两个长度和速度仪中评估了我们方法的正确性，而且讨论了传统方法的差异。

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《International symposium on physical concepts and materials for novel optoelectronic device applications》|1993年||共8页
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Edmondo De Salvo; Raffaello Girlanda;
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中图分类材料和工作物质;
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1. Simple theoretical analysis of the interband optical absorption coefficient in wide-gap semiconductors in the presence of an external electric field and its dependence on a longitudinal magnetic field [J] . Chakraborty PK, Ghoshal S, Ghatak KP Physica, B. Condensed Matter . 2006,第1a2期

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2. Enhancement of interband optical nonlinearity by manipulation of intersubband transitions in an undoped semiconductor quantum well [J] . Neogi A., Mozume T., Wada O., Optics Communications: A Journal Devoted to the Rapid Publication of Short Contributions in the Field of Optics and Interaction of Light with Matter . 1999,第4a6期

机译：通过操纵未掺杂半导体量子阱中的子带间跃迁来增强带间光学非线性
3. Effects of crossed electric and magnetic fields on the interband optical absorption spectra of variably spaced semiconductor superlattices [J] . Zuleta J. N., Reyes-Gomez E. Physica, B. Condensed Matter . 2016,第Null期

机译：交叉电场和磁场对可变间距半导体超晶格的带间光吸收谱的影响
4. Nonlinear optical interband transitions between electronic states in semiconductors in crossed-electric and magnetic fields [C] . Edmondo De Salvo, Digital Equipment SpA, Turin, Physical Concepts and Materials for Novel Optoelectronic Device Applications II . 1993

机译：交叉电场和磁场中半导体电子状态之间的非线性光学带间跃迁
5. Disordered electronic and magnetic systems - Transition metal (manganese) and rare earth (gadolinium) doped amorphous group IV semiconductors (carbon, silicon, germanium) [D] . Zeng, Li 2007

机译：无序的电子和磁性系统 - 过渡金属（锰）和稀土（钆）掺杂非晶族IV半导体（碳，硅，锗）
6. Far-field polarization signatures of surface optical nonlinearity in noncentrosymmetric semiconductors [O] . A. V. Pakhomov, F. J. F. Löchner, L. Zschiedrich, -1

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7. Study of electronic properties of semiconductor heterostructures by a dilution-refrigerator based near-field optical microscope in magnetic field [O] . 伊藤宙陛, イトウヒロノリ 2010

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8. Joint Density of States in Interband Transitions in Semiconductors in a Magnetic Field. [R] . Mohan, L. R. R., Wolff, P. A. 1982

机译：磁场中半导体中带间跃迁中的态密度。

Nonlinear optical interband transitions between electronic states in semiconductors in crossed-electric and magnetic fields

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