Preparation and near-infrared absorption of nano-SnO_2/SiO_2 assemblies with doping and without doping

Shujie Hai; Chunjie Yan; Hongjie Yu

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Preparation and near-infrared absorption of nano-SnO_2/SiO_2 assemblies with doping and without doping

机译：掺杂和不掺杂的纳米SnO_2 / SiO_2组件的制备和近红外吸收

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摘要

The assemblies of nano-SnO_2/SiO_2 and Sb- or Pd-doped nano-SnO_2/SiO_2, in which the nano-SnO_2 particles are located in the pores of mesoporous SiO_2 dry gels, were synthesized. Only for the Sb-doped nano-SnO_2/SiO_2 assemblies, a broad near-infrared absorption step occurs in the optical absorption spectrum of the wavelength range from 300 to 1500nm. The near-infrared absorption phenomenon is attributed to electronic transitions from the ground states to the excitation states of the impurity energy levels, which are formed by Sb doping in SnO_2. With increasing the weight ratio of SnO_2:SiO_2 or the annealing temperature, the near-infrared absorption step slope side exhibits "red shift", which is caused by the quantum confinement effect weakening due to the increased SnO_2 crystalline diameter.

机译：合成了纳米SnO_2 / SiO_2和掺Sb或Pd的纳米SnO_2 / SiO_2的组装体，其中纳米SnO_2颗粒位于介孔SiO_2干凝胶的孔中。仅对于掺杂Sb的纳米SnO_2 / SiO_2组件，在波长范围为300至1500nm的光吸收光谱中发生宽的近红外吸收步骤。近红外吸收现象归因于从基态到杂质能级激发态的电子跃迁，这是通过在SnO_2中掺杂Sb形成的。随着SnO_2：SiO_2的重量比或退火温度的增加，近红外吸收台阶斜率侧显示“红移”，这是由于由于SnO_2晶体直径的增加而导致的量子限制效应减弱的结果。

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《Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics》 |2009年第1期|共4页
作者
Shujie Hai; Chunjie Yan; Hongjie Yu;
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正文语种 eng
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Oxide materials; Sol-gel processes; Nanostructured materials; Red shift;

机译：氧化物材料;溶胶凝胶法;纳米结构材料;红移;

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1. Preparation and near-infrared absorption of nano-SnO_2/SiO_2 assemblies with doping and without doping [J] . Shujie Hai, Chunjie Yan, Hongjie Yu Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics . 2009,第1期

机译：掺杂和不掺杂的纳米SnO_2 / SiO_2组件的制备和近红外吸收
2. Temperature dependence of the crossover between the near-infrared Er and defect-related photoluminescence bands of Ge-rich Er-doped SiO_2 layers [J] . A. Kanjilal, L. Rebohle, S. Prucnal, Physical review . 2009,第24期

机译：富锗掺ErSiO_2层的近红外Er与缺陷相关的光致发光带之间的交叉的温度依赖性
3. Nanosecond Dynamics of the Near-Infrared Photoluminescence of Er-Doped SiO_2 Sensitized with Si Nanocrystals [J] . I. Izeddin, A. S. Moskalenko, I. N. Yassievich, Physical review letters . 2006,第20期

机译：Si纳米晶敏化的掺Er SiO_2的近红外光致发光的纳秒动力学
4. Nonlinear optical absorption and ultrafast optical response of un-doped and P-doped nanocrystalline Si/SiO_2 multilayers [C] . P Zhang, D K Li, L Y Jiang, International Conference on Advances in Optoelectronics and Micro/Nano-optics . 2017

机译：非掺杂和P掺杂纳米晶体Si / SiO_2多层的非线性光学吸收和超快光学响应
5. Quantum coherence and interference effects in doped crystals and semiconductor quantum wells for reduced absorption and lasing without population inversion. [D] . Awad, Iyad (Eddie) G. 1997

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6. Role of Mn2+ Doping in the Preparation of Core-Shell Structured Fe3O4@upconversion Nanoparticles and Their Applications in T1/T2-Weighted Magnetic Resonance Imaging Upconversion Luminescent Imaging and Near-Infrared Activated Photodynamic Therapy [O] . Yang Luo, Wei Zhang, Zhengfang Liao, 2018

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Preparation and near-infrared absorption of nano-SnO_2/SiO_2 assemblies with doping and without doping

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