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A 0.5 to 6 GHz wideband cascode LNA with enhanced linearity by employing resistive shunt-shuntfeedback and derivative superposition

机译:通过采用电阻分流分流和衍生物叠加,具有0.5至6GHz宽带Cascode LNA,具有增强的线性度

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摘要

A wideband bipolar low-noise amplifier (LNA) with enhanced linearity operating in 0.5 to 6 GHz frequency range is proposed in this letter. The LNA design is based on a cascode amplifier with an emitter degeneration RC parallel network and a resistive shunt-shunt feedback which can improve linearity. The cascode topology in conjunction with the preceding series inductor L is utilized to achieve good wideband input impedance matching, while the wideband output impedance matching is realized by using an emitter follower as a buffer. And the third-order input intercept point (IIP3) has been improved due to the derivative superposition technique. The wideband LNA presented in this letter was designed and implemented in a JAZZ 0.18 mu m SiGe BiCMOS process. The measured results show that from 500 MHz to 6 GHz, the power gain (S-21) is 16.5 to 17.1 dB, the noise factor (NF) is 2.7 to 3.3 dB, the current consumption without buffer stage is 12.4 mA at a 3.3 V supply voltage, and the IIP3 is -0.834 dBm at 2 GHz. The chip size is 1.06 x 0.64 mm(2).
机译:在这封信中提出了一种宽带双极低噪声放大器(LNA),其具有增强的线性度运行在0.5至6GHz频率范围内。 LNA设计基于共源共栅放大器,具有发射极退化RC并联网络和电阻分流器的反馈,其可以提高线性。 Cascode拓扑结合前一串串电感器L用于实现良好的宽带输入阻抗匹配,而宽带输出阻抗匹配是通过使用发射器跟随器作为缓冲器来实现的。由于衍生叠加技术,已经改善了三阶输入截距点(IIP3)。在这封信中提供的宽带LNA是在爵士0.18 mu m sige bicmos工艺中设计和实施的。测量结果表明,从500 MHz到6 GHz,功率增益(S-21)为16.5至17.1dB,噪声系数(NF)为2.7至3.3dB,无缓冲阶段的电流消耗为12.4 mA V电源电压,IIP3为-0.834 dBm,为2 GHz。芯片尺寸为1.06×0.64 mm(2)。

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