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Manipulation of film quality and magnetic properties of CrO2 (100) films on TiO2 substrates with carrier gas and growth temperature

机译:用载气和生长温度操纵CRO2(100)膜上CRO2(100)膜的膜质量和磁性

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摘要

High-quality CrO2 films were synthesized on TiO2 (100) substrates at different temperatures using the chemical vapor deposition method in argon or nitrogen atmosphere. It was found that the lower limit for the growth temperature of CrO2 films can be reduced to 310 or 300 degrees C when using Ar or N-2 as the carrier gas, respectively. The quality of CrO2 film on TiO2 substrate can thus be improved by optimizing growth temperature in a much larger range (310-400 degrees C in Ar and 300-430 degrees C in N-2, in contrast with 390-410 degrees C in O-2), which is significant for the practical application of CrO2 films. The best film quality was achieved at 320 degrees C in either Ar or N-2 atmosphere, at which CrO2 film has its narrowest orientation distribution and lowest roughness. Compared to films grown in O-2, films grown in Ar were found to have larger saturation magnetizations (M-s) and magnetic anisotropies, possibly due to numerous O vacancies. Films grown in N-2 are actually N-doped films, and have lower M-s than those grown in O-2. The Curie temperature (T-c) was also tuned by the carrier gas and growth temperature. Films grown in Ar or N-2 generally have a higher T-c value than those grown in O-2. Furthermore, the thermal stability of the films was found to be remarkably improved when using N-2 as the carrier gas.
机译:使用氩气或氮气氛中的化学气相沉积方法在不同温度下在不同温度下在TiO 2(100)衬底上合成高质量的CRO2薄膜。发现当使用Ar或N-2作为载气时,CRO2薄膜的生长温度的下限分别可以减少到310或300℃。因此,通过在o的390-410摄氏度中优化在更大的范围内(310-400摄氏度和300-430℃,与O中的390-410摄氏度相比,可以通过优化较大的较大范围(310-400℃和300-430℃,与O中的390-410摄氏度相比-2),这对于CRO2薄膜的实际应用是重要的。在AR或N-2大气中,在320℃下实现最佳薄膜质量,在其中CRO2薄膜具有最小的取向分布和最低粗糙度。与在O-2中生长的薄膜相比,发现在AR中生长的薄膜具有更大的饱和磁化(M-S)和磁各向异性,可能是由于众多空缺。在N-2中生长的薄膜实际上是N掺杂的薄膜,并且具有较低的M-S比在O-2中生长的薄膜。居里温度(T-C)也被载气和生长温度调节。在AR或N-2中生长的薄膜通常具有比在O-2中生长的T-C值更高。此外,当使用N-2作为载气时,发现薄膜的热稳定性显着改善。

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  • 来源
    《RSC Advances》 |2018年第3期|共7页
  • 作者单位

    Wuhan Univ Sci &

    Technol Coll Sci State Key Lab Refractories &

    Met Wuhan 430065 Hubei Peoples R China;

    Wuhan Univ Sci &

    Technol Coll Sci State Key Lab Refractories &

    Met Wuhan 430065 Hubei Peoples R China;

    Wuhan Univ Minist Educ Sch Phys &

    Technol Key Lab Artificial Micro &

    Nanostruct Wuhan 430072 Hubei Peoples R China;

    Wuhan Univ Minist Educ Sch Phys &

    Technol Key Lab Artificial Micro &

    Nanostruct Wuhan 430072 Hubei Peoples R China;

    Wuhan Univ Minist Educ Sch Phys &

    Technol Key Lab Artificial Micro &

    Nanostruct Wuhan 430072 Hubei Peoples R China;

    Wuhan Univ Sci &

    Technol Sch Mat &

    Met Wuhan 430081 Hubei Peoples R China;

    Wuhan Univ Sci &

    Technol Sch Mat &

    Met Wuhan 430081 Hubei Peoples R China;

    Wuhan Univ Minist Educ Sch Phys &

    Technol Key Lab Artificial Micro &

    Nanostruct Wuhan 430072 Hubei Peoples R China;

    Wuhan Univ Minist Educ Sch Phys &

    Technol Key Lab Artificial Micro &

    Nanostruct Wuhan 430072 Hubei Peoples R China;

    Wuhan Univ Minist Educ Sch Phys &

    Technol Key Lab Artificial Micro &

    Nanostruct Wuhan 430072 Hubei Peoples R China;

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  • 正文语种 eng
  • 中图分类 化学;
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