首页> 外文期刊>Optik: Zeitschrift fur Licht- und Elektronenoptik: = Journal for Light-and Electronoptic >Photovoltaic solar cells based on graphene/gallium arsenide Schottky junction
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Photovoltaic solar cells based on graphene/gallium arsenide Schottky junction

机译:基于石墨烯/砷化镓舒尼德肖特基交界处的光伏太阳能电池

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摘要

In this article, a computational study on the photovoltaic performance and electrical characteristics of graphene/gallium arsenide Schottky junction solar cell with structure graphene/SiO2/GaAs/Au is undertaken. Graphene is used as a transparent current conducting electrode. Design and simulation of the device is carried out using Silvaco TCAD Atlas tool. Thickness of the GaAs layer is taken as 10 mu m throughout the study. Under AM 1.5 G solar illumination, the device shows an open -circuit voltage (V-oc) of 0.35 V, a short-circuit current density (J(sc)) of 2.14 mAcm(-2), and a fill factor (FF) of 69.74%, yielding a profound energy conversion efficiency (eta) of 5.3%. The device exhibits an ideality factor of 1.05 along with a diode rectification ratio of 1.8 x 10(6). The excellent photovoltaic performance of the device is caused by the strong built-in potential in the Schottky junction, low recombination rate and the transparent nature of graphene. The effect of schottky junction formed between graphene and GaAs interface as well as the material properties on the performance of the device is demonstrated. A band diagram is proposed to explain the carrier transport phenomena.
机译:在本文中,对石墨烯/砷化镓肖特基结太阳能电池具有结构石墨烯/ SiO2 / GaAs / Au的光伏性能和电气特性的计算研究。石墨烯用作透明电流导电电极。使用Silvaco TCAD Atlas工具进行设备的设计和仿真。在整个研究中,GaAs层的厚度将在10μm。在AM 1.5克太阳能照射下,该装置显示开放式电压(V-OC)为0.35 V,短路电流密度(J(SC))为2.14 Macm(-2)和填充因子(FF )69.74%,产生深远的能量转换效率(ETA)为5.3%。该装置表现出1.05的理想因子,二极管整流比为1.8×10(6)。该装置的优异光伏性能是由肖特基交界处的强大内置电位,重组率低和石墨烯的透明性引起的。在石墨烯和GaAs界面之间形成的肖氏连接的效果以及对装置性能的材料特性。建议频带图来解释载波运输现象。

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