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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Sn doped ZnO thin film deposition using thermionic vacuum arc technique
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Sn doped ZnO thin film deposition using thermionic vacuum arc technique

机译：SN掺杂ZnO薄膜沉积使用热离子真空电弧技术

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摘要

Sn doped ZnO thin films were prepared on glass, polyethylene terephthalate (PET) and silicon substrate make use of the thermionic vacuum arc technique and their structural, morphological, optical properties were investigated with various methods. The surface and microstructural properties of the Sn doped ZnO thin films were investigated by X-ray diffractometer, field emission scanning electron microscopy, atomic force microscopy, UV-visible spectroscopy, and Raman spectroscopy. According to the obtained results, all deposited films are in polycrystalline form with large crystallites. Due to larger crystallites on a deposited layer on glass and Si substrates, resistivity was found lower than deposited layer on PET substrate. (C) 2018 Elsevier B.V. All rights reserved.
机译：在玻璃上制备Sn掺杂的ZnO薄膜，用各种方法使用热离子真空弧技术及其结构，形态，光学性质进行了热离子真空弧技术。 通过X射线衍射仪，场发射扫描电子显微镜，原子力显微镜，UV可见光谱和拉曼光谱研究了Sn掺杂ZnO薄膜的表面和微观结构性质。 根据所得的结果，所有沉积的薄膜均具有大晶体的多晶形式。 由于玻璃和Si基板上的沉积层上的较大晶体，发现电阻率低于PET基板上的沉积层。 （c）2018年elestvier b.v.保留所有权利。

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