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首页> 外文期刊>Journal of Alloys and Compounds: An Interdisciplinary Journal of Materials Science and Solid-state Chemistry and Physics >Ga-doping of nonpolar m-plane ZnMgO with high Mg contents
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Ga-doping of nonpolar m-plane ZnMgO with high Mg contents

机译：具有高Mg含量的非极性M平面Znmgo的Ga-掺杂

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摘要

The electrical and optical properties of m-plane Ga-doped ZnMgO alloys are analyzed by capacitance-voltage profiling, Hall effect, and IR reflectance and UV-VIS absorption spectroscopies, spanning more than four orders of magnitude in electron concentration. Mg contents up to 50% are achieved while maintaining the wurtzite phase, with a measured band-edge energy of 4.41 eV. Despite the deterioration of the electrical properties with Mg incorporation, high electron concentrations (similar to 4.4 x 10 19 cm(-3)) are measured for Mg contents up to 35%, revealing doping efficiencies close to 100%. The potential physical origin for the drop of the electron concentration and mobility with Mg is analyzed and correlated to the absorption measurements. In ZnO:Ga epilayers band filling is observed, although upon alloying with Mg, bandgap shrinkage and Urbach tailing become evident. It is deduced that the observed carrier compensation arises from the presence of acceptor traps, such as V-zn and V-zn-Ga-zn complexes, whereas impurity scattering and electron trapping at extended defects are the mechanisms affecting the mobility. (C) 2018 The Authors. Published by Elsevier B.V.
机译：通过电容 - 电压分析，霍尔效应和IR反射率和UV-Vis吸收光谱分析M平面GA掺杂ZnMGO合金的电气和光学性质，跨越在电子浓度中的四个数量级以上。 Mg含量高达50％，同时保持紫立岩阶段，测量的带缘能量为4.41eV。尽管用Mg掺入物的电性能劣化，但对于Mg含量，测量高电子浓度（类似于4.4×1019cm（-3）），含量高达35％，揭示掺杂效率接近100％。分析电子浓度和迁移率下降的潜在物理来源，并与吸收测量相关。在ZnO：GA脱落器带填充物被观察到，尽管在用Mg合金化，带隙收缩和Urbach尾巴变得明显。推导出观察到的载体补偿来自受体陷阱的存在，例如V-Zn和V-Zn-Ga-Zn络合物，而杂质散射和延长缺陷的电子捕获是影响移动性的机制。 （c）2018年作者。由elsevier b.v出版。

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