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Enhancement of reliability and stability for transparent amorphous indium-zinc-tin-oxide thin film transistors

机译：增强透明非晶铟 - 锌 - 氧化锡薄膜晶体管的可靠性和稳定性

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摘要

We studied the influence of the backchannel passivation layer (BPL) on the ambient stability of amorphous indium-zinc-tin-oxide thin-film transistors (a-IZTO TFTs), in which atomic layer deposited (ALD) Al2O3 films and plasma-enhanced chemical vapor deposited (PECVD) SiO2 films were separately used to be the channel passivation layers. It was observed that the BPL deposition process strongly affects device performance and stability. From the results of the extracted activation energy (Eact), the Al2O3 passivation layer can reduce the trap density in localized tail states, which improves the mobility of a-IZTO TFTs. Compared with the SiO2 passivation layer, the Al2O3 passivation process effectively suppresses H injection into the a-IZTO channel layer underneath with secondary ion mass spectrometer analysis. In addition, it is found that the a-IZTO TFT with the Al2O3 passivation layer can enhance resistance against negative bias illumination stress (NBIS), making it reliable for realistic operation in flat panel displays.
机译：我们研究了后沟槽钝化层（BPL）对非晶铟 - 锌 - 氧化锡薄膜晶体管（A-IZTO TFT）的环境稳定性的影响，其中原子层沉积（ALD）Al2O3薄膜和等离子体增强将化学气相沉积（PECVD）SiO 2膜分别用于是通道钝化层。观察到BPL沉积过程强烈影响器件性能和稳定性。从提取的激活能量（EACT）的结果，AL2O3钝化层可以降低局部尾态中的陷阱密度，这改善了A-IZTO TFT的移动性。与SiO2钝化层相比，AL2O3钝化过程有效地抑制了通过二次离子质谱仪分析下面的A-IZTO信道层的H注入。另外，发现具有AL2O3钝化层的A-IZTO TFT可以增强抗负偏置照明应力（NBIS）的电阻，使得在平板显示器中的现实操作可靠。

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  • 来源
    《RSC Advances》 |2016年第108期|共6页
  • 作者

    Liu Po-Tsun; Chang Chih-Hsiang; Fuh Chur-Shyang;

  • 作者单位

    Natl Chiao Tung Univ Dept Photon &

    Inst Electroopt Engn Hsinchu 30010 Taiwan;

    Natl Chiao Tung Univ Dept Photon &

    Inst Electroopt Engn Hsinchu 30010 Taiwan;

    Natl Chiao Tung Univ Dept Elect Engn Hsinchu 30010 Taiwan;

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  • 正文语种 eng
  • 中图分类 化学;
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