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首页> 外文期刊>Crystal growth & design >Controlled epitaxial growth of body-centered cubic and face-centered cubic Cu on MgO for integration on Si
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Controlled epitaxial growth of body-centered cubic and face-centered cubic Cu on MgO for integration on Si

机译：在MgO上可控外延生长体心立方和面心立方Cu以整合到Si上

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The Cu/MgO interface plays a crucial role in applications. Face-centered-cubic (fcc) Cu has been reported to grow on MgO substrate (rock salt structure). However, no body-centered-cubic/tetragonal (bcc(t)) Cu has been stabilized on MgO. The special atomic structure of the bcc(t)/rock salt interface contributes to superior thermal, mechanical, and electrical properties. We report, for the first time, the epitaxial growth of bcc(t) and fcc Cu on Si(100) and Si(111) substrates using MgO(100)/TiN(100) and MgO(111)/TiN(111) buffer layers by pulsed laser deposition. We find that the deposition temperature determines the structure of Cu. At high temperature, only fcc Cu grows on both MgO/TiN(100) and MgO/TiN(111) templates. At room temperature, an epitaxial layer of bcc(t) Cu grows pseudomorphically on a MgO(100) template up to the critical thickness, while on a MgO/TiN(111) template, the majority of Cu is fcc, and bcc(t) Cu exists occasionally in a three-dimensional island shape. The growth of these heterostructures involves epitaxy across the misfit scale by matching MgO{200} planes with bcc(t) Cu{110} planes. The integration of Cu/MgO on the technologically important Si substrate holds tremendous promise, because the novel bcc(t) Cu/MgO structure can be integrated with present-day microelectronic or nanoelectronic devices.
机译：Cu / MgO界面在应用中起着至关重要的作用。据报道，面心立方（fcc）Cu在MgO基质（岩盐结构）上生长。但是，尚未将体心立方/四方（bcc（t））Cu稳定在MgO上。 bcc（t）/岩盐界面的特殊原子结构有助于实现卓越的热，机械和电性能。我们首次报告了使用MgO（100）/ TiN（100）和MgO（111）/ TiN（111）在Si（100）和Si（111）衬底上bcc（t）和fcc Cu的外延生长脉冲激光沉积沉积缓冲层。我们发现沉积温度决定了Cu的结构。在高温下，只有fcc Cu才能在MgO / TiN（100）和MgO / TiN（111）模板上生长。在室温下，bcc（t）Cu的外延层在MgO（100）模板上伪变形生长到临界厚度，而在MgO / TiN（111）模板上，大多数Cu为fcc，bcc（t Cu有时以三维岛状存在。这些异质结构的生长涉及通过使MgO {200}平面与bcc（t）Cu {110}平面匹配而在整个失配尺度上进行外延。 Cu / MgO在具有重要技术意义的Si衬底上的集成具有广阔的前景，因为新型bcc（t）Cu / MgO结构可以与当今的微电子或纳米电子器件集成。

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