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首页> 外文期刊>Crystal growth & design >Epitaxial Lateral Overgrowth of Nitrogen-Polar (0001) GaN by Metalorganic Chemical Vapor Deposition
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Epitaxial Lateral Overgrowth of Nitrogen-Polar (0001) GaN by Metalorganic Chemical Vapor Deposition

机译：金属有机化学气相沉积氮极（0001）GaN的外延横向过生长

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摘要

Epitaxial lateral overgrowth (ELO) of nitrogen-polar (0001?) GaN (N-polar GaN) by metalorganic vapor deposition has been studied to achieve a high microstructural quality of N-polar GaN. The influence of growth conditions on lateral growth is investigated, and a correlation of growth conditions with the observed inversion of polarity is established. Most of the observed trends for N-polar ELO are contrary to those reported for Ga-polar experiments. Such differences are explained by considering the property of surface reactivity of N-polar GaN with hydrogen species. On the basis of the trends of the occurrence (or absence) of polarity inversion, an atomistic model is proposed to explain the origin of polarity inversion. This model also allows us to control the process and to completely eliminate polarity inversion, resulting in fully coalesced, purely Npolar GaN with improved crystalline quality.
机译：已经研究了通过金属有机气相沉积法制备的氮极性（0001α）GaN（N-极性GaN）的外延横向过生长（ELO），以实现N极性GaN的高微观结构质量。研究了生长条件对横向生长的影响，并建立了生长条件与观察到的极性反转的相关性。 N极ELO的大多数观测趋势与Ga极实验报道的趋势相反。通过考虑N极性GaN与氢物种的表面反应性的性质来解释这种差异。根据极性反转发生（或不存在）的趋势，提出了一种原子模型来解释极性反转的起源。该模型还使我们能够控制过程并完全消除极性反转，从而产生具有改进晶体质量的完全融合的纯Npolar GaN。

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