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首页> 外文期刊>Crystal growth & design >A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs/GaAs Nanobars by Metal-Organic Chemical Vapor Deposition: From Site Control to Size Control
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A Facile One-Step Approach to Epitaxially Grow Periodic Arrays of InGaAs/GaAs Nanobars by Metal-Organic Chemical Vapor Deposition: From Site Control to Size Control

机译：通过金属有机化学气相沉积外延生长InGaAs / GaAs纳米棒周期阵列的简便一步法：从现场控制到尺寸控制

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Site and size control of ordered arrays of semiconductor nanostructures in an efficient way has remained a large challenge and has thus attracted intensive research interest due to their potential applications in integrated optoelectronics. In this work, we report an original approach to grow hexagonally ordered arrays of InGaAs/GaAs nanobars on the designed regions of GaAs substrate coated with silicon dioxide through nanosphere lithography (NSL). To control the growth sites of the nanostructures, microsized wells are first fabricated on a thin silicon dioxide film deposited on the GaAs substrate by photolithography, and bilayers of hexagonally ordered polymer nanospheres are then self-assembled on the silicon dioxide films with two different thicknesses. Finally, an array of nanocavities is created by dry etching through the self-assembled nanospheres. By controlling the etching depth, the nanocavities are etched down to the GaAs substrate first in the wells, leading to epitaxial growth of InGaAs/GaAs nanobars only in the wells with one-step metalorganic chemical vapor deposition (MOCVD). To fabricate dual sized InGaAs/GaAs nanobars, combined etchants are used to etch not only the silicon dioxide but also the polymer; the etching front of nanocavities inside the microsized wells reaches the GaAs substrate first and is further widened when the etching front of the nanocavities outside the wells also reaches the bottom. This results in the formation of dual-sized nanoopenings of the silicon dioxide film on the GaAs substrate for the expitaxial growth of dual-sized InGaAs/GaAs nanobars by one-step MOCVD.
机译：以有效的方式对半导体纳米结构的有序阵列进行位置和尺寸控制仍然是一个巨大的挑战，由于其在集成光电中的潜在应用，因此吸引了广泛的研究兴趣。在这项工作中，我们报告了一种通过纳米球体光刻（NSL）在覆盖有二氧化硅的GaAs基板设计区域上生长InGaAs / GaAs纳米棒的六角形有序阵列的原始方法。为了控制纳米结构的生长位置，首先通过光刻在沉积在GaAs衬底上的二氧化硅薄膜上制造微孔，然后将六方有序聚合物纳米球的双层自组装在具有两种不同厚度的二氧化硅膜上。最终，通过自组装纳米球的干法蚀刻产生了纳米腔阵列。通过控制刻蚀深度，纳米腔首先在阱中被刻蚀到GaAs衬底，从而导致InGaAs / GaAs纳米棒仅在具有一步金属有机化学气相沉积（MOCVD）的阱中外延生长。为了制造双重尺寸的InGaAs / GaAs纳米棒，组合蚀刻剂不仅用于蚀刻二氧化硅，而且还用于蚀刻聚合物。微孔内部的纳米腔的蚀刻前沿首先到达GaAs衬底，并且当孔外部的纳米腔的蚀刻前沿也到达底部时，纳米蚀刻腔的蚀刻前沿进一步加宽。这导致在GaAs衬底上形成二氧化硅膜的双尺寸纳米开口，以通过一步MOCVD外延生长双尺寸InGaAs / GaAs纳米棒。

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