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Quaternary Chemical Potentials for Gold-Catalyzed Growth of Ternary InGaAs Nanowires

机译:金催化三元InGaAs纳米线生长的第四级化学势。

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Chemical potentials of quaternary liquid alloys are required for theoretical description of the composition and crystal structure of Au-catalyzed ternary III-V nanowires. However, such data are solely missing in the literature. Herein, we use a thermodynamic database for the quaternary Au-In-Ga-As system that has been developed using the CALPHAD (CALculation of PHAse Diagram) method. We present the chemical potential values in Au-In-Ga-As liquid with respect to InGaAs solid. We plot the chemical potentials as functions of the arsenic concentration, indium composition, total composition of the group III elements, and temperature. Our approach can be extended to other material systems and used for particular calculations based on macroscopic nucleation theory. Quantitative data on quaternary chemical potentials obtained here constitute the first step toward comprehensive understanding of growth, composition, and structural evolution of Au-catalyzed InGaAs nanowires.
机译:对于Au催化的III-V纳米线的组成和晶体结构的理论描述,需要四元液态合金的化学势。但是,这些数据在文献中完全缺失。在此,我们将热力学数据库用于通过CALPHAD(PHAse图的计算)方法开发的四元Au-In-Ga-As系统。我们介绍了相对于InGaAs固体,Au-In-Ga-As液体中的化学势值。我们将化学势绘制为砷浓度,铟组成,III族元素的总组成和温度的函数。我们的方法可以扩展到其他材料系统,并用于基于宏观成核理论的特定计算。此处获得的有关季化学势的定量数据构成了全面了解Au催化的InGaAs纳米线的生长,组成和结构演变的第一步。

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