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首页> 外文期刊>CrystEngComm >A systematic study of Ga- and N-polar GaN nanowire-shell growth by metal organic vapor phase epitaxy
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A systematic study of Ga- and N-polar GaN nanowire-shell growth by metal organic vapor phase epitaxy

机译：金属有机气相外延的Ga-和N-极性GaN纳米线 - 壳生长的系统研究

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摘要

Metal organic vapor-phase epitaxy of GaN shells on N- and Ga-polar nanowires on AlN/Si(111) templates has been studied in detail. A polarity-dependent epitaxial optimization of nitride-based core-shell structures is necessary to attain the desired shell shape. On N-polar wires, a maximal shell length has been achieved using N-2, only, as a carrier gas, while the length decreases by substitution of N-2 with H-2. A strong impact of the NW growth template polarity has been observed, which has to be considered to attain the desired shell shape. On Ga-polar wires under pure N-2, an exclusive coverage of the wire tip occurs. Shell growth and an increasing shell length are obtained by injecting increased H-2 flows. The semi-polar (1011) and polar (0001) planes have been identified as the facets that limit the vertical shell length growth evolution on the N- and Ga-polar core-shell structures, respectively. Meanwhile, the m-planar lateral growth mode is found to be identical for both types of polarities. The data are used to set up a growth model that includes the facet-dependent termination, carrier-gas dependent H-passivation, Ga-adatom length and Ga-adlayer formation, and the thereby adjusted three-dimensional growth and shell shape for both polarities. The attained insights and the developed technology allow the epitaxy of homogeneous complex crystal architectures, mandatory for optimized nitride core-shell NW-based devices.
机译：已经详细研究了在ALN / Si（111）模板上的N-和GA极性纳米线上GaN壳的金属有机气相外延。氮化物基核心壳结构的极性依赖性外延优化是达到所需的壳体形状所必需的。在N极电线上，使用N-2仅实现最大壳体长度，仅作为载气，而通过用H-2取代N-2的长度减小。已经观察到NW生长模板极性的强烈影响，这必须考虑达到所需的壳体形状。在纯N-2下的Ga极电线上，发生电线尖的独家覆盖范围。通过喷射增加的H-2流来获得壳生长和增加的壳长度。半极（1011）和极性（0001）平面已被识别为分别限制N-和GA极性核心壳结构上的垂直壳长度生长演化的平面。同时，发现M平面横向生长模式对于两种类型的极性相同。该数据用于建立一种生长模型，该生长模型包括依赖依赖性终端，载气依赖性H钝化，GA - Adatom长度和Ga-Adlayer形成，以及为两个极性调整三维生长和壳体形状。获得的见解和开发技术允许均匀复杂的晶体架构的外延，用于优化的氮化物核心壳NW基装置。

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  • 来源
    《CrystEngComm》 |2020年第33期|共11页
  • 作者

    Blumberg Christian; Haeuser Patrick; Wefers Fabian; Jansen Dennis; Tegude Franz-Josef; Weimann Nils; Prost Werner;

  • 作者单位

    Univ Duisburg Essen Dept Components High Frequency Elect Lotharstr 53 ZHO D-47057 Duisburg Germany;

    Univ Duisburg Essen Dept Components High Frequency Elect Lotharstr 53 ZHO D-47057 Duisburg Germany;

    Univ Duisburg Essen Dept Components High Frequency Elect Lotharstr 53 ZHO D-47057 Duisburg Germany;

    Univ Duisburg Essen Dept Components High Frequency Elect Lotharstr 53 ZHO D-47057 Duisburg Germany;

    Univ Duisburg Essen Dept Components High Frequency Elect Lotharstr 53 ZHO D-47057 Duisburg Germany;

    Univ Duisburg Essen Dept Components High Frequency Elect Lotharstr 53 ZHO D-47057 Duisburg Germany;

    Univ Duisburg Essen Dept Components High Frequency Elect Lotharstr 53 ZHO D-47057 Duisburg Germany;

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  • 正文语种 eng
  • 中图分类 化学工业;晶体学;
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