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首页> 外文期刊>Advances in Mechanical Engineering >Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering
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Effects of Annealing on TiN Thin Film Growth by DC Magnetron Sputtering

机译:直流磁控溅射对TiN薄膜生长的影响

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We have reviewed the deposition of titanium nitride (TiN) thin films on stainless steel substrates by a DC magnetron sputtering method and annealing at different annealing temperatures of 500, 600, and 700 degrees C for 120 min in nitrogen/argon atmospheres. Effects of annealing temperatures on the structural and the optical properties of TiN films were investigated using X-ray diffraction (XRD), atomic force microscope (AFM), field emission scanning electron microscopy (FESEM), and UV-VIS spectrophotometer. Our experimental studies reveal that the annealing temperature appreciably affected the structures, crystallite sizes, and reflection of the films. By increasing the annealing temperature to 700 degrees C crystallinity and reflection of the film increase. These results suggest that annealed TiN films can be good candidate for tokamak first wall due to their structural and optical properties.
机译:我们回顾了通过DC磁控溅射方法在不锈钢基板上沉积氮化钛(TiN)薄膜,并在氮/氩气氛中在500、600和700摄氏度的不同退火温度下退火120分钟。使用X射线衍射(XRD),原子力显微镜(AFM),场发射扫描电子显微镜(FESEM)和UV-VIS分光光度计研究了退火温度对TiN膜结构和光学性能的影响。我们的实验研究表明,退火温度明显影响了薄膜的结构,微晶尺寸和反射率。通过将退火温度提高到700摄氏度,结晶度和膜反射率增加。这些结果表明,退火的TiN膜由于其结构和光学特性,可以成为托卡马克第一壁的良好候选者。

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