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Recovery of quantum efficiency in spin-polarized photocathodes by atomic hydrogen cleaning

机译:原子氢清洗旋转偏振光阴离子中量子效率的回收

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Highlights?The GaAs/GaAsP strained superlattice photocathodes are being used in the SPLEEM.?However, there still remains a serious problem that the quantum efficiency of the superlattice photocathode decreases with repeating the cleaning and the activation process.?In this study, we newly introduced an atomic hydrogen cleaning.?Compared to the conventional heat cleaning, the atomic hydrogen cleaning clearly removed the Cs compound and considerably increased the number of repeatable activation.?The atomic hydrogen cleaning is very useful in the superlattice photocathode applications.AbstractWe demonstrate a new method of cleaning superlattice (SL) photocathodes using atomic hydrogen that allows an increased number of repeat activations. GaAs/GaAsP SL photocathodes were activated with either conventional heat cleaning or atomic hydrogen cleaning. Repeated heat cleaning was found to gradually lower the quantum efficiency (QE) of the photocathodes, while a relatively constant QE was maintained over repeated atomic hydrogen cleaning. These results show that atomic hydrogen cleaning allows a greater number of photocathode cleanings without a loss of performance. Analyses of SL photocathodes indicated that the degradation resulting from heat cleaning can likely be attributed to the build-up of residual Cs compounds as well as damage to the GaAs cap layer. The present study also determined the 1/e lifetime for a GaAs/GaAsP SL photocathode to be 7 h at an initial current of 2.2 ?A.]]>
机译:<![cdata [ 突出显示 在spleem中使用GaAs / GaASP紧张的超晶格光电阴极。 < CE:列表 - 项目ID =“CelistIteM0002”> 但是,仍然仍然是量子效率的严重问题超晶格光电阴极随着清洁和激活过程而减少。 在本研究中,我们新引入了原子氢清洁。 与传统的热清洗相比,原子氢气清洁清楚地清除Cs化合物,并且相当大增加了可重复激活的数量。 原子氢清洁在超晶格光电阴极应用中非常有用。 抽象 我们展示了一种清洁超晶格的新方法(SL)使用原子氢的光电阴极允许增加的重复激活数量。通过传统的热清洁或原子氢清洁活化GaAs / GaASP SL光电阴极。发现重复的热清洁逐渐降低光电量的量子效率(QE),而相对恒定的QE在重复的原子氢清洁上保持。这些结果表明,原子氢清洁允许更多数量的光电阴极清洁,而不会损失性能。 SL光电阴极的分析表明,热清洁产生的降解可能归因于残留CS化合物的积聚以及GaAs盖层的损坏。本研究还确定了GaAs / GaASP SL光电阴极的1 / E寿命在2.2的初始电流下为7小时。 ]]>

著录项

  • 来源
    《Ultramicroscopy》 |2017年第2017期|共5页
  • 作者单位

    High Energy Accelerator Research Organization (KEK);

    Fundamental Electronics Research Institute Osaka Electro-Communication University;

    Fundamental Electronics Research Institute Osaka Electro-Communication University;

    Fundamental Electronics Research Institute Osaka Electro-Communication University;

    Aichi Synchrotron Radiation Center;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 光学仪器;
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