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首页> 外文期刊>Crystal growth & design >Nucleation Control of 3C-SiC Induced by the Spiral Structure of 6H-SiC
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Nucleation Control of 3C-SiC Induced by the Spiral Structure of 6H-SiC

机译：6H-SIC螺旋结构诱导3C-SIC的成核控制

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摘要

A new process for the fabrication of double positioning boundary (DPB) free 3C-SiC was demonstrated by utilizing the threading screw dislocations of 6H-SiC, using the following two steps: (1) formation of a spiral structure with six bilayer steps on a seed 6H-SiC; and (2) nucleation of 3C-SiC on the seed. In the first step, the six-bilayer step structure was formed via spiral dissolution using a molten Fe-Si alloy. The formation of a spiral structure on both the 6H-SiC (0001) and (000 (1) over bar) faces could be explained by BCF theory. In the second step, we observed that the nucleation and growth of 3C-SiC occurred only on the 6H-SiC (0001) face, while step-flow growth of 6H-SiC was observed on the (000 (1) over bar) face. The different growth modes presumably arose from the smaller step energy at the 6H-SiC (0001)/alloy interface than that at 6H-SiC (000 (1) over bar)/alloy interface, which was predicted from the width of the steps fabricated by the spiral dissolution. The obtained 3C-SiC on the continuous spiral steps of the seed 6H-SiC substrate had the same stacking structure as the seed, even at the 6H-SiC/3C-SiC interface. Consequently, we successfully obtained a DPB-free region of 3C-SiC from the start of the growth.
机译：通过利用以下两个步骤，通过6H-SiC的螺纹螺杆脱位来说明制备双定位边界（DPB）游离3C-SiC的新方法：（1）形成螺旋结构，六个双层步骤种子6H-SIC; （2）种子上的3C-SiC成核。在第一步中，通过使用熔融Fe-Si合金通过螺旋溶解形成六双层步骤结构。在BCF理论中可以解释在6H-SiC（0001）和（1）上方杆）面上的螺旋结构的形成。在第二步中，我们观察到，3C-SiC的成核和生长仅在6H-SiC（0001）面上发生，而在（000（1）上方）面上观察到6H-SiC的步骤流动生长。不同的生长模式可能从6H-SiC（0001）/合金界面处的较小步骤能量从6H-SiC（000（1）上方）/合金界面处的较小的步骤能量从其从制造的步骤的宽度预测到通过螺旋溶解。即使在6H-SiC / 3C-SiC界面，也将获得的种子6H-SiC衬底的连续螺旋步骤上的3C-SiC具有与种子相同的堆叠结构。因此，我们成功地从生长开始时获得了3C-SIC的无DPB区域。

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  • 来源
    《Crystal growth & design》 |2020年第7期|共9页
  • 作者

    Kawanishi Sakiko; Watanabe Ryo; Shibata Hiroyuki;

  • 作者单位

    Tohoku Univ Inst Multidisciplinary Res Adv Mat Sendai Miyagi 9808577 Japan;

    Tohoku Univ Inst Multidisciplinary Res Adv Mat Sendai Miyagi 9808577 Japan;

    Tohoku Univ Inst Multidisciplinary Res Adv Mat Sendai Miyagi 9808577 Japan;

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  • 原文格式 PDF
  • 正文语种 eng
  • 中图分类 晶体学;
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