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首页> 外文期刊>Indian Journal of Pure & Applied Physics >Effect of growth interruption on photoluminescence of self-assembled InAs/GaAs quantum dot heterostructures
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Effect of growth interruption on photoluminescence of self-assembled InAs/GaAs quantum dot heterostructures

机译：生长中断对自组装InAs / GaAs量子点异质结构光致发光的影响

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摘要

The effects of growth interruption (GI) on self-assembled InAs/GaAs quantum dot (QD) heterostructures have been presented. Samples with different GI times were grown on GaAs substrate by metal-organic chemical vapour epitaxy. Photoreflectance and temperature dependent photoluminescence (PL) spectra from the samples were measured. It is found that increasing GI time during InAs QDs formation induces a larger dot size and a higher QD size uniformity. The carrier dynamics in QD system has been investigated in detail by analyzing the PL spectra. With increasing temperature, thermal redistribution effect among dots is evident for the sample with shorter GI time, leading to a quick red-shift of the PL peak energy and a reduction of the PL line width in mid-temperature range. On the other hand, for sample with longer time, such effect is weak and overcome by the electron-phonon scattering effect, which is consistent with the observed monotonically increasing linewidth of PL spectra with temperature.
机译：提出了生长中断（GI）对自组装InAs / GaAs量子点（QD）异质结构的影响。通过金属有机化学气相外延法将具有不同GI时间的样品生长在GaAs衬底上。测量了样品的光反射和温度相关的光致发光（PL）光谱。发现在InAs QD形成期间增加GI时间会引起更大的点尺寸和更高的QD尺寸均匀性。通过分析PL光谱，详细研究了QD系统中的载流子动力学。随着温度的升高，对于GI时间较短的样品，点之间的热重分布效应明显，从而导致PL峰值能量快速红移，并降低了中温范围内的PL线宽。另一方面，对于时间较长的样品，这种效应较弱，并且可以通过电子-声子散射效应克服，这与观察到的PL谱线随温度单调增加的线宽一致。

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