Improved Impact lonization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO_2 as the Gate Dielectric

Kuan-Wei Lee

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Improved Impact lonization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO_2 as the Gate Dielectric

机译：以液相沉积的SiO_2作为栅介质的AlGaAs / InGaAs PHEMT中改进的冲击电离

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This study describes AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistors (MOS-PHEMTs) with a liquid phase deposited SiCh (LPD-SiO_2) as the gate dielectric. Compared to its counterpart PHEMT, the AlGaAs/InGaAs MOS-PHEMT exhibits a larger gate bias operation, a higher breakdown voltage, a lower subthreshold current, and an improved gate leakage current with an effectively suppressed impact ionization effect. Consequently, LPD-SiO_2 may also be used as gate oxides and as effective passivation on III-V compound semiconductor devices.

机译：这项研究描述了AlGaAs / InGaAs金属氧化物半导体假晶高电子迁移率晶体管（MOS-PHEMT），其中液相沉积的SiCh（LPD-SiO_2）作为栅极电介质。与对应的PHEMT相比，AlGaAs / InGaAs MOS-PHEMT具有更大的栅极偏置操作，更高的击穿电压，更低的亚阈值电流以及改善的栅极泄漏电流，同时有效地抑制了碰撞电离效应。因此，LPD-SiO_2也可以用作栅氧化物和III-V族化合物半导体器件上的有效钝化剂。

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《ECS Journal of Solid State Science and Technology》 |2013年第1期|共3页
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Kuan-Wei Lee;
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中图分类电化学工业;
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1. Improved Impact lonization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO_2 as the Gate Dielectric [J] . Kuan-Wei Lee ECS Journal of Solid State Science and Technology . 2013,第1期

机译：以液相沉积的SiO_2作为栅介质的AlGaAs / InGaAs PHEMT中改进的冲击电离
2. AlGaAs/InGaAs metal-oxide-semiconductor pseudomorphic high-electron-mobility transistor with a liquid phase oxidized AlGaAs as gate dielectric [J] . Kuan-Wei Lee, Po-Wen Sze, Yeong-Her Wang, Solid-State Electronics . 2005,第2期

机译：以液相氧化的AlGaAs作为栅介质的AlGaAs / InGaAs金属氧化物半导体假晶高电子迁移率晶体管
3. Improved Low-Frequency Noise and Microwave Performance of Enhancement-Mode InGaP/InGaAs PHEMT with a Liquid-Phase Oxidized GaAs without a Gate Recess [J] . Kuan-Wei Lee, Wei-Sheng Chen ECS Solid State Letters . 2013,第2期

机译：利用液相氧化GaAS改善增强型Ingap / InGaAs Phemt的低频噪声和微波性能，没有闸门凹槽
4. Noise characteristics of dual-gate AlGaAs/InGaAs pHEMTs [C] . Chih-Chan Hu, Yue-Ming Hsin, Lin Dong-Ming, 2011 21st International Conference on Noise and Fluctuations . 2011

机译：双栅极AlGaAs / InGaAs pHEMT的噪声特性
5. Study of high-k materials deposited by liquid source misted chemical deposition (LSMCD) method for advanced gate dielectric applications. [D] . Lee, Dong-Oh. 2002

机译：通过液源雾化化学沉积（LSMCD）方法沉积的高k材料的研究用于高级栅极电介质应用。
6. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric [O] . Kai-Yuen Lam, Jung-Sheng Huang, Yong-Jie Zou, 2016

机译：使用液相沉积的TiO2作为栅介质的AlGaAs / InGaAs PHEMT的亚阈值特性和闪烁噪声降低
7. Reduced Subthreshold Characteristics and Flicker Noise of an AlGaAs/InGaAs PHEMT Using Liquid Phase Deposited TiO2 as a Gate Dielectric [O] . Kai-Yuen Lam, Jung-Sheng Huang, Yong-Jie Zou, 2016

机译：采用液相沉积TiO2作为栅介质降低alGaas / InGaas pHEmT的亚阈值特性和闪烁噪声

Improved Impact lonization in AlGaAs/InGaAs PHEMT with a Liquid Phase Deposited SiO_2 as the Gate Dielectric

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