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首页> 外文期刊>ECS Journal of Solid State Science and Technology >Effect of Polishing Parameters on Chemical Mechanical Planarization of C-Plane (0001) Gallium Nitride Surface Using SiO_2 and Al_2O3 Abrasives
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Effect of Polishing Parameters on Chemical Mechanical Planarization of C-Plane (0001) Gallium Nitride Surface Using SiO_2 and Al_2O3 Abrasives

机译：抛光参数对使用SiO_2和Al_2O3磨料的C平面（0001）氮化镓表面化学机械平面化的影响

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摘要

In this study, Chemical Mechanical Planarization (CMP) of (0001) GaN surface, using two different slurries containing colloidal silica and alumina as abrasive nanoparticles, has been reported. Effect of processing parameters, such as concentration of the oxidizer, downward pressure, head rpm, base rpm, pH of the slurries, and type and concentration of abrasive particles, on the material removal rate (MRR) and surface quality (roughness) have been studied in details. The maximum MRR has been found to be ～39 nm/hr and ～85 nm/hr for slurries containing SiO_2 and Al_2O_3 abrasives, respectively, under 38 kPa pressure, 90 rpm base speed (100 rpm for Al_2O_3 containing slurry), 30 rpm carrier speed, slurry pH 1 (2 for Al_2O_3 containing slurry), 0.3 M Oxidizer concentration, and 3.75 wt% abrasive particle concentration. RMS surface roughness of 1.3 A and 0.7 A, over scanning area of 10 μm × 10 μm and 5 μm × 5 μm, respectively, has been achieved on polished Ga-faced GaN surface for SiO_2 containing slurry using optimized slurry chemistry and processing parameters.
机译：在这项研究中，已经报道了（0001）GaN表面的化学机械平面化（CMP），它使用两种不同的包含胶体二氧化硅和氧化铝的浆料作为磨料纳米颗粒。加工参数（例如氧化剂的浓度，向下压力，扬程rpm，基本rpm，浆液的pH值以及磨料颗粒的类型和浓度）对材料去除率（MRR）和表面质量（粗糙度）的影响详细研究。对于含SiO_2和Al_2O_3磨料的浆料，在38 kPa压力，90 rpm基本速度下（对于含Al_2O_3的浆料为100 rpm），30 rpm的载体，发现最大MRR分别为〜39 nm / hr和〜85 nm / hr。速度，浆料pH 1（含Al_2O_3的浆料为2），0.3 M氧化剂浓度和3.75 wt％磨料颗粒浓度。使用优化的浆料化学性质和工艺参数，在抛光的Ga面GaN表面上对含SiO_2的SiO_2浆料，分别在10μm×10μm和5μm×5μm的扫描区域上实现了1.3 A和0.7 A的RMS表面粗糙度。

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