Microlens Array on Sapphire Substrate Prepared by FIB to Enhance Electroluminescence of GaN/Sapphire Blue LED

Ming-Kwei Lee; Kwei-Kuan Kuo

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Microlens Array on Sapphire Substrate Prepared by FIB to Enhance Electroluminescence of GaN/Sapphire Blue LED

机译：FIB在蓝宝石衬底上制备微透镜阵列，以增强GaN /蓝宝石蓝色LED的电致发光

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A simple one-step focused ion beam (FIB) etching technique was used to fabricate a microlens array on the back side of sapphire substrate of a GaN blue light emitting diode (LED) with a nominal lens diameter of 2.7 mu m. The microlens array can enhance the electroluminescence of GaN/sapphire blue LED to about 1.6 times at 20 mA.

机译：一种简单的单步聚焦离子束（FIB）蚀刻技术用于在标称透镜直径为2.7μm的GaN蓝色发光二极管（LED）的蓝宝石衬底的背面上制造微透镜阵列。微透镜阵列可以在20 mA下将GaN /蓝宝石LED的电致发光增强到约1.6倍。

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《Electrochemical and solid-state letters》 |2007年第1期|共3页
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Ming-Kwei Lee; Kwei-Kuan Kuo;
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中图分类电化学工业;
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1. Microlens Array on Sapphire Substrate Prepared by FIB to Enhance Electroluminescence of GaN/Sapphire Blue LED [J] . Ming-Kwei Lee, Kwei-Kuan Kuo Electrochemical and solid-state letters . 2007,第1期

机译：FIB在蓝宝石衬底上制备微透镜阵列，以增强GaN /蓝宝石蓝色LED的电致发光
2. Study of polarization field in GaN-based blue LEDs on Si and sapphire substrate by electroluminescence [J] . Youqun Li, Wenqing Fang, Weihua Liu, Journal of Luminescence . 2007,第JanaApr期

机译：通过电致发光研究硅和蓝宝石衬底上的GaN基蓝色LED的偏振场
3. Reduced Residual Stress and Enhanced Performance of GaN-Based LEDs Prepared by Liquid Phase Deposition Silicon Oxide-Nano Patterned Sapphire Substrate [J] . Sheng-Chieh Chang, Cheng-Yu Hsieh, Bo-Wen Lin ECS Solid State Letters . 2014,第11期

机译：液相沉积氧化硅-纳米图案蓝宝石衬底制备的GaN基LED的残余应力降低且性能增强
4. Internal quantum efficiency measurement in InGaN/GaN UV LEDs with patterned sapphire substrate by photoluminescence and electroluminescence method [C] . Wang C. H., Chiu C. H., Ke C. C., 2010 Conference on Lasers and Electro-Optics (CLEO) and Quantum Electronics and Laser Science Conference (QELS) . 2010

机译：用光致发光和电致发光方法测量带图案蓝宝石衬底的InGaN / GaN UV LED的内部量子效率
5. TEM characterization of gallium nitride/sapphire interface and the buffer layer on sapphire substrate by MOCVD. [D] . Shea, Brian Daniel. 2001

机译：氮化镓/蓝宝石界面和蓝宝石衬底上缓冲层的TEM表征通过MOCVD。
6. Properties of GaN-based light-emitting diodes on patterned sapphire substrate coated with silver nanoparticles prepared by mask-free chemical etching [O] . Lung-Chien Chen, Wen-Fang Tsai 2013

机译：通过无掩模化学刻蚀制备的涂有银纳米颗粒的蓝宝石图案衬底上的GaN基发光二极管的性能
7. Enhanced Output Power of GaN-Based LEDs With Nano-Patterned Sapphire Substrates [O] . J. J. Chen, Y. K. Su, C. L. Lin, 2008

机译：具有纳米图案蓝宝石基板的GaN的LED的增强输出功率

Microlens Array on Sapphire Substrate Prepared by FIB to Enhance Electroluminescence of GaN/Sapphire Blue LED

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