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首页> 外文期刊>Bulletin of the Russian Academy of Sciences. Physics >CRITERIA OF APPLICABILITY OF WEAK-GENERATION APPROXIMATION TO SEMICONDUCTORS WITH DIFFUSION LENGTHS OVER 10μm IN ONE-ELECTRODE SCHEME OF SIGNAL FORMATION IN EBIC METHOD
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CRITERIA OF APPLICABILITY OF WEAK-GENERATION APPROXIMATION TO SEMICONDUCTORS WITH DIFFUSION LENGTHS OVER 10μm IN ONE-ELECTRODE SCHEME OF SIGNAL FORMATION IN EBIC METHOD

机译:EBIC方法一电极信号形成方案中,扩散长度超过10μm的半导体弱生成近似的适用标准

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摘要

The criteria of applicability of the weak-generation approximation to semiconductors with large diffusion lengths (silicon and germanium) in a one-electrode scheme of signal formation in the electron-beam induced current method were established. It was found that when the calculation of a detected signal allows an error > 1 %, the linear approximation was valid for beam currents up to 1 μA. An empirical relation was obtained, which determines the range of validity of the weak-generation approximation when the allowable error was less than 1 %.
机译:建立了在电子束感应电流法中单信号形成信号的单电极方案中弱扩散近似对大扩散长度的半导体(硅和锗)的适用性标准。已经发现,当计算检测到的信号允许误差> 1%时,线性近似对高达1μA的电子束电流有效。获得了经验关系,该关系确定了当允许误差小于1%时,弱代近似的有效性范围。

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