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首页> 外文期刊>Bulletin of the Korean Chemical Society >Hydrogenated In-doped ZnO Thin Films for the New Anode Material of Organic Light Emitting Devices:Synthesis and Application Test
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Hydrogenated In-doped ZnO Thin Films for the New Anode Material of Organic Light Emitting Devices:Synthesis and Application Test

机译：用于有机发光器件新型阳极材料的氢化掺杂ZnO薄膜的合成及应用试验

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摘要

Transparent In-doped (1 at.%) zinc oxide (IZO) thin films are deposited by pulsed DC magnetron sputtering with H2 mixed Ar atmosphere on glass substrate without any heating process.Even at room temperature,highly c-axis oriented IZO thin films were grown in perpendicular to the substrate.The hydrogenated IZO (IZO:H) film isolated in H2 atmosphere for 30 min exhibited an average optical transmittance higher than 85% and low electrical resistivity of less than 2.7 x 10~(-3) OMEGA·cm.These values are comparable with those of commercially available ITO.Each of the IZO films was used as an anode contact to fabricate organic light-emitting diodes (OLEDs) and the device performances studied.At the current density of 1 x 10~3 A/m~2,the OLEDs with IZO:H (H2) anode show excellent efficiency (11 V drive voltage) and a good brightness (8000 cd/m~2) of the light emitted from the devices,which are as good as the control device built on a commercial ITO anode.
机译：透明的In掺杂（1 at。％）氧化锌（IZO）薄膜通过H2混合Ar气氛的脉冲DC磁控溅射在玻璃基板上沉积而无需任何加热过程，即使在室温下，高度c轴取向的IZO薄膜在H2气氛中分离30分钟的氢化IZO（IZO：H）膜表现出的平均光学透射率高于85％，电阻率低至2.7 x 10〜（-3）OMEGA·这些值与市售ITO相当.IZO膜中的每一个均用作阳极触点，以制造有机发光二极管（OLED），并研究了器件性能。在1 x 10〜3的电流密度下A / m〜2，带有IZO：H（H2）阳极的OLED显示出优异的效率（11 V驱动电压）和良好的亮度（8000 cd / m〜2）从设备发出的光，与建立在商用ITO阳极上的控制设备。

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