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Raman study on self-assembled InAs/InAlAs/InP(001) quantum wires

机译:自组装InAs / InAlAs / InP(001)量子线的拉曼研究

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摘要

The phonons of self-assembled InAs/InAlAs/InP quantum wires (QWRs) have been studied by Raman scattering. The QWR LO phonons show an unusual frequency shift with the increase of the InAs deposited thickness due to dislocations. The QWR LO phonons are found to follow the selection rule of the LO phonons in bulk zinc-blende semiconductors. Because of the intermixing of In/Al atoms and the multiplication of dislocations, the post-growth thermal annealing treatment leads to a shift of the QWR LO phonons to lower frequency.
机译:通过拉曼散射研究了自组装InAs / InAlAs / InP量子线(QWR)的声子。由于位错,随着InAs沉积厚度的增加,QWR LO声子显示出异常的频移。发现QWR LO声子遵循块状闪锌矿半导体中LO声子的选择规则。由于In / Al原子的混合和位错的增加,生长后的热退火处理导致QWR LO声子转移到较低的频率。

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