Fabrication of a 50 nm half-pitch wire grid polarizer using nanoimprint lithography

Sell-Won Ahn; KI-Dong Lee; Jin-Seng Kim

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Fabrication of a 50 nm half-pitch wire grid polarizer using nanoimprint lithography

机译：使用纳米压印光刻技术制造50 nm半间距线栅偏振器

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We report the fabrication of a 50 nm half-pitch wire grid polarizer with high performance using nanoimprint lithography. The device is a form of aluminium gratings on a glass substrate whose size of 5.5 cm x 5.5 cm is compatible with a microdisplay panel. A stamp with a pitch of 100 nm was fabricated on a silicon substrate using laser interference lithography and sidewall patterning. The imprint and the aluminium etching processes are optimized to realize uniform aluminium gratings with aspect ratio of 4. The polarization extinction ratio of the fabricated device is over 2000, with transmission of 85 percent at a wavelength of 450 nm, which is the highest value ever reported. This work demonstrates that nanoimprint lithography is a unique cost-effective solution for nanopatterning requirements in consumer electronics components.

机译：我们报告使用纳米压印光刻技术制造具有高性能的50 nm半间距线栅偏振器。该设备是玻璃基板上铝光栅的一种形式，其尺寸为5.5厘米x 5.5厘米，可与微显示面板兼容。使用激光干涉光刻和侧壁图案在硅基板上制造间距为100 nm的压模。优化压印和铝蚀刻工艺，以实现纵横比为4的均匀铝光栅。所制造器件的偏振消光比超过2000，在450 nm波长下的透射率为85％，这是有史以来的最高值。报告。这项工作表明，纳米压印光刻技术是一种独特的经济高效的解决方案，可满足消费电子组件中的纳米图案要求。

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《Nanotechnology》 |2005年第9期|共4页
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Sell-Won Ahn; KI-Dong Lee; Jin-Seng Kim;
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1. Fabrication of a 50 nm half-pitch wire grid polarizer using nanoimprint lithography [J] . Sell-Won Ahn, KI-Dong Lee, Jin-Seng Kim Nanotechnology . 2005,第9期

机译：使用纳米压印光刻技术制造50 nm半间距线栅偏振器
2. Fabrication of Multi-bit Crossbar Circuits at Sub-50 nm Half-pitch by Using UV-based Nanoimprint Lithography [J] . Gun Young.Jung, Wei.Wu, Heon.Lee, Journal of Photopolymer Science and Technology . 2005,第5期

机译：基于UV的纳米压印光刻技术在低于50 nm半间距的多位纵横制电路的制作
3. Fabrication of a 34 x 34 Crossbar Structure at 50 nm Half-pitch by UV-based Nanoimprint Lithography [J] . G.Y.Jung, S.Ganapathiappan, Douglas A.A.Ohlberg, Nano letters . 2004,第7期

机译：通过基于紫外线的纳米压印光刻技术在50 nm半间距处制作34 x 34横杆结构
4. The UV-Nanoimprint Lithography with Multi-head Nanoimprinting Unit for Sub-50nm Half-pitch Patterns [C] . Jae-Jong Lee, Kee-Bong Choi, Gee-Hong Kim, SICE-ICASE International Joint Conference . 2006

机译：具有多头纳米压印单元的UV-NanoImprint光刻，用于子50nm半间距图案
5. Combining nanoimprint lithography with dynamic templating for the fabrication of dense, large-area nanoparticle arrays. [D] . Golze, Spencer D. 2016

机译：将纳米压印光刻技术与动态模板相结合，以制造致密的大面积纳米粒子阵列。
6. Nanoimprint lithography steppers for volume fabrication of leading-edge semiconductor integrated circuits [O] . S.V. Sreenivasan 2017

机译：纳米压印光刻步进机用于批量生产前沿半导体集成电路
7. Fabrication of Multi-bit Crossbar Circuits at Sub-50 nm Half-pitch by Using UV-based Nanoimprint Lithography [O] . Gun Young, Wei. Wu, Heon Lee, 2005

机译：通过使用基于UV的纳米压印光刻在Sub-50nm半间距下的多比特交叉杆电路的制造
8. Fabrication of Sub-50 nm Finger Spacing and Width High-Speed Metal-Semiconductor-Metal Photodetectors Using High-Resolution Electron Beam Lithography and Molecular Beam Epitaxy [R] . Chou, S. Y., Liu, Y., Fischer, P. B. 1991

机译：利用高分辨率电子束光刻和分子束外延制作亚50nm手指间距和宽度高速金属半导体金属光电探测器

Fabrication of a 50 nm half-pitch wire grid polarizer using nanoimprint lithography

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