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首页> 外文期刊>Nanotechnology >Modified self-assembly of InAs islands acting as stressors for strain-induced InGaAs(P)/InP quantum dots
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Modified self-assembly of InAs islands acting as stressors for strain-induced InGaAs(P)/InP quantum dots

机译：InAs岛的改良自组装，充当应变诱导的InGaAs（P）/ InP量子点的应力源

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摘要

We report modified self-assembly of InAs islands acting as stressors for strain-induced InGaAs(P) quantum dots (SIQDs). The quantum dots are fabricated by growing InAs islands on top of a near-surface InGaAs(P)/InP quantum well (QW). The compressively strained QW affects the size and density of the InAs islands, as compared to islands grown on a plain InP buffer. By adjusting the growth conditions, the height of the InAs stressors is tuned from 15 to 30 nm while the areal density varies around 109 cm~(-2). The confinement of earners in the SIQDs is characterized by low-temperature photoluminescence. Increasing the size of the InAs stressor is shown to enhance the depth of the lateral confinement potential and reduce the level splitting of excited QD states. However, the small inhomogeneous broadening of the SIQD transitions, as narrow as 11 meV, shows no correlation with the height dispersion of the stressor islands.
机译：我们报告修改后的InAs岛的自组装，充当应变诱导的InGaAs（P）量子点（SIQDs）的压力源。通过在近表面InGaAs（P）/ InP量子阱（QW）顶部生长InAs岛来制造量子点。与在普通InP缓冲区上生长的孤岛相比，压缩应变QW影响InAs孤岛的大小和密度。通过调整生长条件，InAs应力源的高度从15 nm调整到30 nm，而面密度在109 cm〜（-2）左右变化。 SIQD中的受薪者禁闭的特征是低温光致发光。结果表明，增加InAs应力源的尺寸可以增加横向约束电位的深度，并减少激发QD态的能级分裂。但是，SIQD跃迁的微小非均质展宽（窄至11 meV）与应力源岛的高度离散无关。

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