Electric Properties of (SiC)_(1-x)(AlN)_x/SiC Anisotropic Heterostructures

B. A. Bilalov; M. K. Kurbanov; A. A. Gadzhiev; Sh. M. Ramazanov

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Electric Properties of (SiC)_(1-x)(AlN)_x/SiC Anisotropic Heterostructures

机译：（SiC）_（1-x）（AlN）_x / SiC各向异性异质结构的电学性质

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The heterostructures of p-(SiC)_(1-x)(AlN)_x-6H-SiC are synthesized by means of sublimation epitaxy of (SiC)_(1-x)(AlN) semiconductor solid solutions at 6H-SiC substrates. The results of the investigation of the concentration and temperature dependences on current - voltage characteristics (CVCs) are presented. It is revealed that due to the high potential barriers the forward current is caused by the tunneling and recombination processes of charge carriers via states at the boundary surface.

机译：通过（SiC）_（1-x）（AlN）半导体固溶体在6H-的升华外延合成p-（SiC）_（1-x）（AlN）_x / n-6H-SiC的异质结构SiC基板。给出了浓度和温度对电流-电压特性（CVC）的依赖性研究结果。揭示了由于高的势垒，正向电流是由电荷载流子通过界面处的态的隧穿和复合过程引起的。

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《Russian Microelectronics》 |2011年第8期|共4页
作者
B. A. Bilalov; M. K. Kurbanov; A. A. Gadzhiev; Sh. M. Ramazanov;
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原文格式 PDF
正文语种 eng
中图分类微电子学、集成电路（IC）;
关键词
Current-voltage characteristics (CVCs); Tunneling; Charge carriers; Heterostructures;

机译：电流-电压特性（CVC）;隧道;电荷载流子;异质结构;

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1. Electric Properties of (SiC)_(1-x)(AlN)_x/SiC Anisotropic Heterostructures [J] . B. A. Bilalov, M. K. Kurbanov, A. A. Gadzhiev, Russian Microelectronics . 2011,第8期

机译：（SiC）_（1-x）（AlN）_x / SiC各向异性异质结构的电学性质
2. Interface properties of an AlN/(AlN)_x(SiC)_(1-x)/4H-SiC heterostructure [J] . J. H. Edgar, Z. Gu, L. Gu, Physica Status Solidi. A, Applications and Materials Science . 2006,第15期

机译：AlN /（AlN）_x（SiC）_（1-x）/ 4H-SiC异质结构的界面性质
3. Comparison of electrical, optical and structural properties of epitaxially grown HEMT's type AlGaN/AlN/GaN heterostructures on Al_2O_3, Si and SiC substrates [J] . Mateusz Wosko, Bogdan Paszkiewicz, Tomasz Szymanski, Superlattices and microstructures . 2016,第deca期

机译：在Al_2O_3，Si和SiC衬底上外延生长的HEMT型AlGaN / AlN / GaN异质结构的电，光学和结构性质的比较
4. Investigation of optical properties of SiC/(SiC)_(1-x)(AlN)_x heterostructures [C] . Gadjimet Safaraliev, Bilal Bilalov, Dinara Dallaeva, Photonics, devices, and systems V . 2011

机译：SiC /（SiC）_（1-x）（AlN）_x异质结构的光学性质研究
5. Electronic properties of SiC and AlN surfaces and interfaces. [D] . Benjamin, Mark Conrad. 1998

机译：SiC和AlN表面和界面的电子特性。
6. Effect of Gas Annealing on the Electrical Properties of Ni/AlN/SiC [O] . Dong-Hyeon Kim, Michael A. Schweitz, Sang-Mo Koo 2021

机译：气体退火对Ni / Aln / SiC电性能的影响
7. Research of the Optical and Electrical Properties of Solid Solutions (Sic)1-X (Aln)X [O] . Z.I. Shakhbanova, M.K. Guseynov, M.A. Magomedov 2021

机译：固溶体（SiC）1-X（ALN）X的光学和电性能研究

Electric Properties of (SiC)_(1-x)(AlN)_x/SiC Anisotropic Heterostructures

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