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首页> 外文期刊>Sensors and Actuators, A. Physical >Microfabrication of 3D silicon MEMS structures using gray-scale lithography and deep reactive ion etching
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Microfabrication of 3D silicon MEMS structures using gray-scale lithography and deep reactive ion etching

机译:使用灰度光刻和深度反应离子刻蚀对3D硅MEMS结构进行微加工

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摘要

Micromachinina arbitrary 3D silicon structures for micro-electromechanical systems can be accomplished using gray-scale lithography along with dry anisotropic etching. In this study, we have investigated the use of deep reactive ion etching (DRIE) and the tailoring of etch selectivity for precise fabrication. Silicon loading, the introduction of an O-2 step, wafer electrode power, and wafer temperature are evaluated and determined to be effective for coarsely controlling etch selectivity in DRIE. The non-uniformity and surface roughness characteristics are evaluated and found to be scaled by the etch selectivity when the 3D profile is transferred into the silicon. A micro-compressor is demonstrated using gray-scale lithography and DRIE showing that etch selectivity can be successfully tailored for a specific application. (c) 2004 Elsevier B.V. All rights reserved.
机译:可以使用灰度光刻以及干法各向异性蚀刻来完成用于微机电系统的微机械加工任意3D硅结构。在这项研究中,我们研究了深度反应离子刻蚀(DRIE)的使用和精确刻蚀的刻蚀选择性定制。评估并确定硅负载量,O-2步骤的引入,晶片电极功率和晶片温度对于有效地粗略控制DRIE中的蚀刻选择性是有效的。当将3D轮廓转移到硅中时,可以评估非均匀性和表面粗糙度特性,并根据蚀刻选择性对其进行缩放。使用灰度光刻和DRIE演示了一种微型压缩机,表明可以针对特定应用成功定制蚀刻选择性。 (c)2004 Elsevier B.V.保留所有权利。

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