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首页> 外文期刊>Semiconductors >Study of the Properties of Solar Cells Based on a-Si:H p-i-n Structures by Admittance Spectroscopy
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Study of the Properties of Solar Cells Based on a-Si:H p-i-n Structures by Admittance Spectroscopy

机译：导纳光谱研究基于a-Si：H p-i-n结构的太阳能电池的性能

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摘要

Properties of solar cells based on a-Si:H p-i-n structures are studied by admittance spectroscopy. The responses of the density of states in the (i)a-Si:H layers and a-SiC:H layers in the p-type region of the structure are distinguished in the admittance spectra. The density of states in the middle of the mobility gap for (i)a-Si:H is estimated to be 5 × 10~(16) cm~(-3) eV~(-1). It is shown that this value increases during the course of photoinduced degradation to ~10~(17) cm~(-3) eV~(-1). For the wide-gap a-SiC:H layers, the observed response of the density of states in the valence-band tails made it possible to estimate the lower bound for the density of states at the Fermi level (10~(18) cm~(-3) eV~(-1)) and to find the Fermi level position to be 0.4 eV above the valenceband edge. The suggested procedure can be used to optimize the design of solar cells in order to improve their efficiency.
机译：通过导纳光谱研究了基于a-Si：H p-i-n结构的太阳能电池的性能。在结构的p型区域中的（i）a-Si：H层和a-SiC：H层中的状态密度的响应在导纳光谱中得以区分。对于（i）a-Si：H，迁移率间隙中间的状态密度估计为5×10〜（16）cm〜（-3）eV〜（-1）。结果表明，该值在光致降解过程中增加到〜10〜（17）cm〜（-3）eV〜（-1）。对于宽间隙a-SiC：H层，观察到的价带尾态中态密度的响应使得可以估计费米能级（10〜（18）cm 〜（-3）eV〜（-1））并找到费米能级位置比价带边缘高0.4 eV。建议的过程可用于优化太阳能电池的设计，以提高其效率。

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