Anomalous Distribution of Germanium Implanted into a SOI Dielectric Layer after the Annealing of Radiation Defects

E. L. Pankratov; O. P. Guskova; M. N. Drozdov; N. D. Abrosimova; V. M. Vorotyntsev

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Anomalous Distribution of Germanium Implanted into a SOI Dielectric Layer after the Annealing of Radiation Defects

机译：辐射缺陷退火后注入SOI介电层中的锗的反常分布

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The germanium-distribution profile is investigated in a Si/SiO_2/Si structure after the implantation of ~(74)Ge into SiO_2 dielectric layer, bonding with the Si device layer, and high-temperature annealing. The anomalously high transport and accumulation of ~(74)Ge atoms near the SiO_2/Si interface far from the bonded boundary is found. The observed ~(74)Ge distribution is beyond the framework of the existing model of diffusion of Ge in Si and SiO_2 after postimplantation annealing. A modified model of diffusion of Ge atoms near the Si/SiO_2 interface qualitatively explaining the observed features is proposed.

机译：在将〜（74）Ge注入到SiO_2介电层中，与Si器件层结合并进行高温退火之后，研究了Si / SiO_2 / Si结构中锗的分布分布。发现远离键合边界的SiO_2 / Si界面附近〜（74）Ge原子异常高的传输和积累。观察到的〜（74）Ge分布超出了注入后退火后Ge在Si和SiO_2中扩散的现有模型的框架。提出了一种修饰的Ge原子在Si / SiO_2界面附近扩散的模型，定性地解释了观察到的特征。

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来源
《Semiconductors》 |2014年第5期|共5页
作者
E. L. Pankratov; O. P. Guskova; M. N. Drozdov; N. D. Abrosimova; V. M. Vorotyntsev;
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正文语种 eng
中图分类半导体物理学;
关键词
Distribution; Germanium; Implanted;

机译：分布;锗;植入;

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专利

1. Anomalous Distribution of Germanium Implanted into a SOI Dielectric Layer after the Annealing of Radiation Defects [J] . E. L. Pankratov, O. P. Guskova, M. N. Drozdov, Semiconductors . 2014,第5期

机译：辐射缺陷退火后注入SOI介电层中的锗的反常分布
2. REDISTRIBUTION OF A DOPANT DURING ANNEALING OF RADIATION DEFECTS IN A MULTILAYER STRUCTURE BY LASER SCANS FOR PRODUCTION OF AN IMPLANTED-JUNCTION RECTIFIER [J] . E. L. PANKRATOV International journal of nanoscience . 2008,第4a5期

机译：用多层激光对多层结构中的辐射缺陷退火过程中的掺杂物再分布，以生产注入式整流器
3. Redistribution of infused and implanted dopants in a multilayer structure during annealing of dopant and radiation defects for the production of a system of p-n junctions [J] . E L Pankratov Semiconductor science and technology . 2008,第9期

机译：在掺杂物和辐射缺陷退火过程中，注入和注入的掺杂物在多层结构中的重新分布，以产生p-n结系统
4. Influence of dynamic annealing on the depth distribution of germanium implanted in (100) silicon at elevated temperatures [C] . A.Nejim, C.jeynes, R.P.Webb, Symposium on Defects and Diffusion in Silicon Processing April 1-4, 1997, San Francisco, California, U.S.A . 1997

机译：动态退火对高温下（100）硅中锗注入深度分布的影响
5. Creation of surface and bulk defects of germanium and surface roughening of germanium during high energy ion irradiation. [D] . Kim, Jaichan. 2001

机译：在高能离子辐照过程中，会产生锗的表面缺陷和整体缺陷，以及锗的表面粗糙。
6. Ohmic Contacts on p-Type Al-Implanted 4H-SiC Layers after Different Post-Implantation Annealings [O] . Monia Spera, Giuseppe Greco, Domenico Corso, 2019

机译：在不同的注入后退火后p型铝注入的4H-SiC层上的欧姆接触
7. Evolution of vacancy-related defects upon annealing of ion-implanted germanium [O] . Slotte, J, Rummukainen, M, Tuomisto, F, 2008

机译：离子注入锗退火后空位相关缺陷的演变

Anomalous Distribution of Germanium Implanted into a SOI Dielectric Layer after the Annealing of Radiation Defects

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