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Silicon vacancy-related centers in non-irradiated 6H-SiC nanostructure

机译：6H-SiC纳米结构中与硅空位有关的中心

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摘要

We present the first findings of the silicon vacancy related centers identified in the non-irradiated 6H-SiC nanostructure using the electron spin resonance (ESR) and electrically-detected (ED) ESR technique. This planar 6H-SiC nanostructure represents the ultra-narrow p-type quantum well confined by the delta-barriers heavily doped with boron on the surface of the n-type 6H-SiC(0001) wafer. The new EDESR technique by measuring the only magnetoresistance of the 6H-SiC nanostructure under the high frequency generation from the delta-barriers appears to allow the identification of the isolated silicon vacancy centers as well as the triplet center with spin state S = 1. The same triplet center that is characterized by the large value of the zero-field splitting constant D and anisotropic g-factor is revealed by the ESR (X-band) method. The hyperfine (HF) lines in the ESR and EDESR spectra originating from the HF interaction with the N-14 nucleus seem to attribute this triplet center to the N-V (Si) defect.
机译：我们介绍了使用电子自旋共振（ESR）和电检测（ED）ESR技术在非辐射6H-SiC纳米结构中确定的硅空位相关中心的第一个发现。这种平面的6H-SiC纳米结构代表了由n型6H-SiC（0001）晶片表面上重掺杂硼的δ-势垒所限定的超窄p型量子。新的EDESR技术通过测量由δ-势垒产生的高频下6H-SiC纳米结构的唯一磁阻，似乎可以识别孤立的硅空位中心以及自旋态S = 1的三​​重态中心。通过ESR（X波段）方法可以揭示出具有相同特征的三重态中心，其特征在于零场分裂常数D和各向异性g因子较大。 ESR和EDESR光谱中的超细（HF）线似乎源于HF与N-14原子核之间的相互作用，似乎将此三重态中心归因于N-V（Si）缺陷。

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