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Removal of aluminum from silicon by electron beam melting with exponential decreasing power

机译:通过电子束熔化以指数递减的方式从硅中去除铝

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Aluminum is one of the main impurities in silicon, which can be separated and eliminated by electron beam melting. However, high removal efficiency can be obtained only by increasing melt temperature or extending refining time, resulting in high energy consumption. In this work, the directional solidification of silicon was achieved by electron beam with exponential decreasing power, considering that aluminum has both characteristics of segregation and evaporation. The distributions of aluminum show increasing trend from the bottom to the top of the electron beam melted silicon ingot, which is the same as that after traditional directional solidification. The removal efficiency is improved by the coupling of segregation and evaporation. Compared with traditional electron beam melting, the loss of silicon reduced by more than 52% and the energy consumption reduced by more than 54%. This method is more effective to remove aluminum from silicon with low energy consumption. (C) 2015 Elsevier B.V. All rights reserved.
机译:铝是硅中的主要杂质之一,可以通过电子束熔化将其分离和消除。然而,仅通过提高熔体温度或延长精制时间才能获得高去除效率,导致高能耗。在这项工作中,考虑到铝具有偏析和蒸发的特性,硅的定向凝固是通过电子束以指数递减的方式实现的。从电子束熔化的硅锭的底部到顶部,铝的分布呈现出增加的趋势,这与传统定向凝固后的分布相同。通过分离和蒸发的结合提高了去除效率。与传统的电子束熔化相比,硅的损耗降低了52%以上,能耗降低了54%以上。这种方法以较低的能耗更有效地从硅中去除铝。 (C)2015 Elsevier B.V.保留所有权利。

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