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首页> 外文期刊>Solar Energy Materials and Solar Cells: An International Journal Devoted to Photovoltaic, Photothermal, and Photochemical Solar Energy Conversion >Wide-gap a-Si_(1-x)C_x:H solar cells with high light-induced stability for multijunction structure applications
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Wide-gap a-Si_(1-x)C_x:H solar cells with high light-induced stability for multijunction structure applications

机译：具有高光诱导稳定性的宽间隙a-Si_（1-x）C_x：H太阳能电池，用于多结结构应用

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摘要

Light-induced stability of various pin type wide-gap a-Si _(1-x)C_x:H solar cells has been systematically investigated. The i-layers of all a-Si_(1-x)C_x:H solar cells were prepared using a 60 MHz VHF-PECVD technique with monomethyl silane (SiH _3CH_3, MMS) as the carbon source. It was confirmed that device structures, especially the type of buffer layer and thickness of i-layer, strongly affect the degradation behavior of a-Si_(1-x)C_x:H solar cells. The fabricated a-Si_(1-x)C_x:H solar cells showed efficiency degradation of about 1122% depending on device structure. Efficiency degradation of optimized a-Si_(1-x)C_x:H solar cells was much better compared with those reported by other groups even with thinner i-layer. These results revealed that a-Si_(1-x)C_x:H solar cells with optimized buffer layer and prepared using MMS as the carbon source have high light-induced stability. Moreover, we have also fabricated a-Si _(1-x)C_x:H/a-Si:H tandem cells with a SiO_x intermediate layer to examine the benefit of a-Si_(1-x)C_x:H top cells. Up to now, V_(oc) as high as 1.81 V and fill factor (FF) as high as 0.70 have been achieved. Thus, the fabricated a-Si_(1-x)C _x:H solar cell is promising to be used as the top cell in multijunction solar cells.
机译：已经系统地研究了各种pin型宽间隙a-Si _（1-x）C_x：H太阳能电池的光诱导稳定性。所有的a-Si_（1-x）C_x：H太阳能电池的i层均使用60 MHz VHF-PECVD技术，以单甲基硅烷（SiH _3CH_3，MMS）作为碳源制备。证实了器件结构，特别是缓冲层的类型和i层的厚度，强烈影响a-Si_（1-x）C_x：H太阳能电池的退化行为。所制造的a-Si_（1-x）C_x：H太阳能电池根据器件结构而显示出约1122％的效率下降。优化的a-Si_（1-x）C_x：H太阳能电池的效率下降比其他小组报告的效率要好得多，即使i层更薄。这些结果表明，以MMS为碳源制备的具有优化缓冲层的a-Si_（1-x）C_x：H太阳能电池具有较高的光诱导稳定性。此外，我们还制造了带有SiO_x中间层的a-Si _（1-x）C_x：H / a-Si：H串联电池，以检验a-Si_（1-x）C_x：H顶部电池的益处。到目前为止，已经实现了高达1.81 V的V_（oc）和高达0.70的填充因子（FF）。因此，所制造的a-Si_（1-x）C_x：H太阳能电池有望用作多结太阳能电池中的顶部电池。

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